公开(公告)号：US5215678A

公开(公告)日：1993-06-01

申请号：US808070

申请日：1991-12-10

申请人： Mitsuhiro Koden ,  Tomoaki Kuratate ,  Fumiaki Funada ,  Kazuhiko Sakaguchi ,  Naoya Kasai ,  Yoshikazu Takehira ,  Tohru Kitamura ,  Yutaka Shiomi

发明人： Mitsuhiro Koden ,  Tomoaki Kuratate ,  Fumiaki Funada ,  Kazuhiko Sakaguchi ,  Naoya Kasai ,  Yoshikazu Takehira ,  Tohru Kitamura ,  Yutaka Shiomi

IPC分类号： C09K19/34 ,  C09K19/42 ,  C09K19/46

CPC分类号： C09K19/42 ,  C09K19/0225 ,  C09K19/46 ,  C09K19/3405

摘要： A ferroelectric liquid crystal composition comprising at least one compound represented by the formula (I): ##STR1## wherein R.sup.1 and R.sup.2 are, the same or different, a straight-chain or branched-chain alkyl group having 1 to 15 carbon atoms, and each asterisk represents an asymmetric carbon atom, and at least one compound represented by the formula (II): ##STR2## wherein R.sup.3 and R.sup.4 are, the same or different, a straight-chain or branched-chain alkyl group having 1 to 15 carbon atoms, and each asterisk represents an asymmetric carbon atom, and liquid crystal device incorporating same.

摘要翻译： 一种铁电液晶组合物，其包含至少一种由式（I）表示的化合物：其中R 1和R 2相同或不同，具有1至15个碳原子的直链或支链烷基 原子，并且每个星号表示不对称碳原子，以及至少一种由式（II）表示的化合物：其中R 3和R 4相同或不同，为直链或支链烷基 具有1至15个碳原子的基团，并且每个星号表示不对称碳原子，和与其结合的液晶装置。

公开(公告)号：US4918494A

公开(公告)日：1990-04-17

申请号：US304278

申请日：1989-01-31

申请人： Mitsuhiro Koden ,  Hirohisa Tanaka ,  Kohzo Yano

发明人： Mitsuhiro Koden ,  Hirohisa Tanaka ,  Kohzo Yano

IPC分类号： H01L29/417 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/41733 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor which includes an insulative substrate, and a gate electrode, a gate insulating film, a semi-conductor film, a source electrode, and a drain electrode, which are all laminated in that order onto the insulating substrate in the form of an array. The gate electrode is made of tantalum, and the gate insulating film is formed into a double-layered construction of an anodized tantalum film and a silicon nitride film, while the semi-conductor film is provided at each intersection between the gate electrode and the source electrode.

公开(公告)号：US4857907A

公开(公告)日：1989-08-15

申请号：US043342

申请日：1987-04-28

申请人： Mitsuhiro Koden

发明人： Mitsuhiro Koden

IPC分类号： G02F1/1368 ,  H01L27/12

CPC分类号： H01L27/12 ,  G02F1/1368

摘要： A liquid-crystal display device comprising thin-film transistors arrayed in a matrix, wherein each of said thin-film transistors comprises an insulating substrate, a gate electrode disposed on said insulating substrate, a first insulating film covering said gate electrode, an a-Si semiconductor film disposed on said first insulating film, a second insulating film disposed on said a-Si semiconductor film, a p-doped n+-amorphous Si film forming both a source and a drain on said a-Si semiconductor film and said second insulating film, a third insulating film covering said p-doped n+-amorphous Si film, except for a part of said p-doped n+-amorphous Si film, and said a-Si semiconductor film, a source electrode and a drain electrode forming junctions with said part of the p-doped n+-amorphous Si film and covering said third insulating film, and a picture-element electrode, a part of which is superposed on said drain electrode.

摘要翻译： 一种液晶显示装置，包括以矩阵形式排列的薄膜晶体管，其中每个所述薄膜晶体管包括绝缘基板，设置在所述绝缘基板上的栅电极，覆盖所述栅电极的第一绝缘膜， Si半导体膜，设置在所述a-Si半导体膜上的第二绝缘膜，在所述a-Si半导体膜上形成源极和漏极的p掺杂的n +非晶Si膜，所述第二绝缘膜 膜，覆盖所述p掺杂的n + - 无定形Si膜的第三绝缘膜，除了所述p掺杂的n +无定形Si膜的一部分，并且所述a-Si半导体膜，源电极和漏电极形成与 所述部分p掺杂n +无定形Si膜并覆盖所述第三绝缘膜，以及图像元素电极，其一部分叠置在所述漏极上。