公开(公告)号：US06713969B2

公开(公告)日：2004-03-30

申请号：US10355173

申请日：2003-01-31

Applicant: Murray Sirkis ,  Wayne L. Johnson ,  Andrej Mitrovic ,  Eric J. Strang

Inventor： Murray Sirkis ,  Wayne L. Johnson ,  Andrej Mitrovic ,  Eric J. Strang

IPC: H01J724

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H05H1/0062

Abstract: A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma density along a path of the signal within a plasma field. Alternatively, the plasma processing system includes a plasma chamber, a plurality of open resonators provided within the plasma chamber, a plurality of detectors, and a processor. The processor is configured to receive a plurality of mean electron plasma density measurements from the detectors that correspond to locations of the plurality of open resonators.

Abstract translation: 一种等离子体处理系统，包括等离子体室，可移动地安装在等离子体室内的开放式谐振器和检测器。 开放谐振器产生微波信号，并且检测器检测微波信号并测量等离子体场内的信号路径上的平均电子等离子体密度。 或者，等离子体处理系统包括等离子体室，设置在等离子体室内的多个开放谐振器，多个检测器和处理器。 处理器被配置为从对应于多个开放谐振器的位置的检测器接收多个平均电子等离子体密度测量值。

公开(公告)号：US06674241B2

公开(公告)日：2004-01-06

申请号：US10199120

申请日：2002-07-22

Applicant: Eric J. Strang ,  Paul Moroz

Inventor： Eric J. Strang ,  Paul Moroz

IPC: H05B3126

CPC classification number: H01J37/321 ,  H01J37/32688

Abstract: A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region. The method further includes introducing a first process gas into the first injection region via a first inlet, and introducing a second process gas into the second injection region via a second inlet. The chamber has a wall encircling the first inlet, such that the wall has a terminal end including the second inlet.

Abstract translation: 一种等离子体处理装置，包括具有上表面，第一入口和第二入口的处理室。 该装置包括从上表面延伸到处理室的壁。 壁围绕第一入口，并且壁具有基端和终端，其中终端包括第二入口。 该设备包括设置在该壁内且围绕该第一入口的第一感应线圈，以及设置在该壁内且环绕第二入口的第二感应线圈。 另外，该装置包括设置在与第一入口相邻的壁的基端内的第一磁体阵列和设置在邻近第二入口的壁的终端内的第二磁体阵列。 提供了一种在等离子体处理装置内控制等离子体化学的方法，其包括以下步骤：提供关于第一注入区域的第一磁场并提供围绕第二注入区域的第二磁场。 该方法还包括经由第一入口将第一工艺气体引入第一注入区域，以及经由第二入口将第二工艺气体引入第二注入区域。 该室具有围绕第一入口的壁，使得壁具有包括第二入口的末端。