公开(公告)号：US20180174806A1

公开(公告)日：2018-06-21

申请号：US15840636

申请日：2017-12-13

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuya NAGASEKI ,  Shinji HIMORI ,  Mitsunori OHATA

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32669 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32688 ,  H01J37/32715 ,  H01L21/67069

摘要： Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.

公开(公告)号：US09349574B2

公开(公告)日：2016-05-24

申请号：US14414946

申请日：2013-08-05

申请人： Tokyo Electron Limited

发明人： Ryoichi Yoshida ,  Takayuki Ishii ,  Ken Kobayashi

IPC分类号： C03C15/00 ,  H01J37/32 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01J37/32082 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31144

摘要： A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

摘要翻译： 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。

公开(公告)号：US20130015053A1

公开(公告)日：2013-01-17

申请号：US13181210

申请日：2011-07-12

申请人： Victor M. Benveniste ,  Svetlana Rdovanov ,  Costel Biloiu

发明人： Victor M. Benveniste ,  Svetlana Rdovanov ,  Costel Biloiu

IPC分类号： H05H1/46 ,  H01L21/3065 ,  C23C16/505

CPC分类号： H01J37/32807 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3065

摘要： Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface forms a wall of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.

摘要翻译： 公开了电感耦合RF等离子体源，其提供磁约束以减少等离子体损耗和法拉第屏蔽以抑制寄生电容性部件。 电感耦合RF等离子体系统包括RF电源，等离子体室，永磁体阵列和天线阵列。 等离子体室由壁和具有内表面和外表面的电介质窗构成，其中内表面形成等离子体室的壁。 平行导电永磁体的阵列电互连并且嵌入介于靠近内表面的电介质窗壁内，并在一端接地。 永磁体阵列元件在等离子体室中等离子体交替地被磁化，以形成多尖点磁场。 天线阵列可以由平行管组成，RF电流通过该平行管循环。 天线阵列垂直于永磁体阵列定向。

公开(公告)号：US07883633B2

公开(公告)日：2011-02-08

申请号：US11612129

申请日：2006-12-18

申请人： Roger A. Lindley ,  Scott A. Hogenson ,  Daniel J. Hoffman

发明人： Roger A. Lindley ,  Scott A. Hogenson ,  Daniel J. Hoffman

IPC分类号： C23F1/00

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32688

摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

摘要翻译： 本文提供了用于在处理室中旋转磁场的方法。 在一个实施例中，用于旋转处理室中的磁场的方法包括形成具有初级形状的磁场; 将主要形状改变为至少两个顺序的过渡形状; 并将过渡形状改变为旋转的主要形状。 任选地，在每个步骤中，磁场可以保持在大致恒定的量级。 可选地，施加到一个或多个磁场产生线圈的最大一个电流等于零或在任何两个相邻步骤之间具有其极性反转。

公开(公告)号：US07527713B2

公开(公告)日：2009-05-05

申请号：US10950349

申请日：2004-09-23

申请人： Tza-Jing Gung ,  Mark A. Perrin ,  Andrew Gillard

发明人： Tza-Jing Gung ,  Mark A. Perrin ,  Andrew Gillard

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23B11/00 ,  C25B13/00

CPC分类号： H01J37/3408 ,  H01J37/32688

摘要： A quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor, preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the gas sputtering the wafer. The coil array may include a tubular magnetic core, particularly useful for suppressing stray fields. A water cooling coil may be wrapped around the coil array to cool all the coils. The electromagnets can be powered in different relative polarities in a multi-step process.

摘要翻译： 一个四重电磁线圈阵列，其围绕室等离子体溅射反应器的侧壁外部的腔室轴线同轴布置，优选地在室内的RF线圈的背面。 可以单独控制线圈电流以产生不同的磁场分布，例如在溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和溅射蚀刻模式之间，其中RF线圈支撑气体溅射 晶圆。 线圈阵列可以包括管状磁芯，特别适用于抑制杂散磁场。 水冷盘管可缠绕在线圈阵列上以冷却所有线圈。 电磁铁可以在多步骤过程中以不同的相对极性供电。

公开(公告)号：US20090008033A1

公开(公告)日：2009-01-08

申请号：US12204408

申请日：2008-09-04

申请人： Roger Alan Lindley ,  Jingbao Liu ,  Bryan Y. Pu ,  Keiji Horioka

发明人： Roger Alan Lindley ,  Jingbao Liu ,  Bryan Y. Pu ,  Keiji Horioka

IPC分类号： C23F1/08 ,  B05C5/00

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32688

摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.

摘要翻译： 提供了提供对磁场的更大控制的磁场发生器。 磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。 在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

公开(公告)号：US07438783B2

公开(公告)日：2008-10-21

申请号：US11116442

申请日：2005-04-28

申请人： Koji Miyata ,  Tetsuji Sato

发明人： Koji Miyata ,  Tetsuji Sato

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32688

摘要： Disclosed is a plasma processing apparatus and a plasma processing method. A substrate to be processed is accommodated in a vacuum chamber within which a plasma generator is provided so as to generate plasma for use in performing plasma processing on the substrate. Outside the vacuum chamber provided is a magnetic field generator for generating a multi-pole magnetic field at the periphery of the substrate. The magnetic field generator comprises an inner ring-shaped magnetic field generating portion and an outer ring-shaped magnetic field generating portion, both of which are provided outside the vacuum chamber in a concentric relationship with the vacuum chamber and are independently rotatable with each other.

摘要翻译： 公开了一种等离子体处理装置和等离子体处理方法。 待处理的基板容纳在其中设置有等离子体发生器的真空室中，以便产生用于在基板上进行等离子体处理的等离子体。 在设置的真空室外面是用于在基板周边产生多极磁场的磁场发生器。 磁场发生器包括内环形磁场产生部分和外环形磁场产生部分，它们均设置在与真空室同心的真空室的外部，并且彼此独立地旋转。

公开(公告)号：US20070113980A1

公开(公告)日：2007-05-24

申请号：US11612129

申请日：2006-12-18

申请人： Roger Lindley ,  Scott Hogenson ,  Daniel Hoffman

发明人： Roger Lindley ,  Scott Hogenson ,  Daniel Hoffman

IPC分类号： C23F1/00

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32688

摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

摘要翻译： 本文提供了用于在处理室中旋转磁场的方法。 在一个实施例中，用于旋转处理室中的磁场的方法包括形成具有初级形状的磁场; 将主要形状改变为至少两个顺序的过渡形状; 并将过渡形状改变为旋转的主要形状。 任选地，在每个步骤中，磁场可以保持在大致恒定的量级。 可选地，施加到一个或多个磁场产生线圈的最大一个电流等于零或在任何两个相邻步骤之间具有其极性反转。

公开(公告)号：US20070108042A1

公开(公告)日：2007-05-17

申请号：US11612102

申请日：2006-12-18

申请人： Scott Hogenson ,  Roger Lindley ,  Daniel Hoffman

发明人： Scott Hogenson ,  Roger Lindley ,  Daniel Hoffman

IPC分类号： C23C14/32 ,  C23C14/00 ,  H05H1/24

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32688

摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

公开(公告)号：US20060081559A1

公开(公告)日：2006-04-20

申请号：US11116442

申请日：2005-04-28

申请人： Koji Miyata ,  Tetsuji Sato

发明人： Koji Miyata ,  Tetsuji Sato

IPC分类号： C23F1/00 ,  H01L21/306 ,  C03C15/00

CPC分类号： H01L21/31116 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32688

摘要： Disclosed is a plasma processing apparatus and a plasma processing method. A substrate to be processed in accommodated in a vacuum chamber within which a plasma generator is provided so as to generate plasma for use in performing plasma processing on the substrate. Outside the vacuum chamber provided is a magnetic field generator for generating a multi-pole magnetic field at the periphery of the substrate. The magnetic field generator comprises an inner ring-shaped magnetic field generating portion and an outer ring-shaped magnetic field generating portion, both of which are provided outside the vacuum chamber in a concentric relationship with the vacuum chamber and are independently rotatable with each other.

摘要翻译： 公开了一种等离子体处理装置和等离子体处理方法。 待处理的基板容纳在其中设置有等离子体发生器的真空室中，以便产生用于在基板上进行等离子体处理的等离子体。 在设置的真空室外面是用于在基板周边产生多极磁场的磁场发生器。 磁场发生器包括内环形磁场产生部分和外环形磁场产生部分，它们均设置在与真空室同心的真空室的外部，并且彼此独立地旋转。