公开(公告)号：US09793345B1

公开(公告)日：2017-10-17

申请号：US15390548

申请日：2016-12-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wanxun He ,  Su Xing

IPC: H01L29/66 ,  H01L21/336 ,  H01L29/06 ,  H01L29/423 ,  H01L27/02

CPC classification number: H01L29/0619 ,  H01L27/0207 ,  H01L29/4238

Abstract: A semiconductor device is disclosed, including a plurality of gate rings formed on a substrate and concentrically surrounding a first doped region formed in the substrate. The gate rings are equipotentially interconnected by at least a connecting structure. A second doped region is formed in the substrate, exposed from the space between adjacent gate rings. A third doped region is formed in the substrate adjacent to the outer perimeter of the outermost gate ring. The first doped region, the third doped region and the gate rings are electrically biased and the second doped regions are electrically floating.

公开(公告)号：US20170098712A1

公开(公告)日：2017-04-06

申请号：US14874546

申请日：2015-10-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhi-Biao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin ,  Su Xing ,  Tien-Yu Hsieh

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/115 ,  H01L29/66 ,  H01L49/02

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/66742 ,  H01L29/7869

Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.