公开(公告)号：US5447885A

公开(公告)日：1995-09-05

申请号：US268948

申请日：1994-06-30

Applicant: Hyun-jin Cho ,  Heung-mo Yang ,  Yun-sung Shin ,  Oh-Hyun Kwon

Inventor： Hyun-jin Cho ,  Heung-mo Yang ,  Yun-sung Shin ,  Oh-Hyun Kwon

IPC: H01L21/316 ,  H01L21/32 ,  H01L21/76

CPC classification number: H01L21/32

Abstract: In a method for forming an isolation region in a semiconductor device, after forming a first oxide film and a silicon film on a semiconductor substrate, an oxidation-blocking film is formed on the silicon film. Then, a high-temperature heat treatment process is performed in a nitrogenous atmosphere. The oxidation-blocking film is selectively etched to form an opening, and a thermal oxidation process is performed to form a thermal oxide film in the opening. A bird's beak between the oxidation-blocking film and the silicon film is suppressed because of the heat treatment in a nitrogenous atmosphere, so that stable isolation characteristics can be secured.

Abstract translation: 在半导体器件中形成隔离区域的方法中，在半导体衬底上形成第一氧化膜和硅膜之后，在硅膜上形成氧化阻挡膜。 然后，在含氮气氛中进行高温热处理工序。 选择性地蚀刻氧化阻挡膜以形成开口，并且进行热氧化工艺以在开口中形成热氧化膜。 由于在含氮气氛中的热处理，抑制了氧化阻挡膜和硅膜之间的鸟嘴，从而可以确保稳定的隔离特性。