公开(公告)号：US20060274579A1

公开(公告)日：2006-12-07

申请号：US11361118

申请日：2006-02-24

申请人： Hyun-Chul Ha ,  Jong-Hwa Kim

发明人： Hyun-Chul Ha ,  Jong-Hwa Kim

IPC分类号： G11C16/04

CPC分类号： G11C16/30 ,  G11C5/145

摘要： Provided is a multi-voltage generator for a flash memory device including a high voltage pumping unit configured to generate a high voltage in response to an enable signal, voltage regulators, each regulator coupled to the high voltage and a control voltage and configured to generate a pumping signal, and a selector configured to select one of the pumping signals as the enable signal.

摘要翻译： 提供了一种用于闪速存储器件的多电压发生器，其包括高压泵浦单元，其被配置为响应于使能信号产生高电压，电压调节器，耦合到高电压的每个调节器和控制电压，并被配置为产生 以及被配置为选择一个所述泵浦信号作为使能信号的选择器。

公开(公告)号：US06335881B2

公开(公告)日：2002-01-01

申请号：US09781932

申请日：2001-02-12

申请人： Jong-Hwa Kim ,  Eun-Cheol Kim

发明人： Jong-Hwa Kim ,  Eun-Cheol Kim

IPC分类号： G11C1604

CPC分类号： G11C16/34 ,  G11C16/12

摘要： The method for programming a flash memory device includes sequentially loading program data in the page buffer circuit responsive to a first command signal, the first command signal indicating program data input and generating a program voltage responsive to a second command signal, the second command signal indicating programming initiation. EEPROM cells are programmed after the program voltage reaches a predetermined target. All of the programmed EEPROM cells are verified to ensure that they are properly programmed. If the EEPROM cells are not properly programmed, programming is repeated until all of the EEPROM cells are properly programmed. The program voltage is increased in a stepwise manner every time programming is repeated.

摘要翻译： 用于对闪速存储器件进行编程的方法包括响应于第一命令信号顺序地将程序数据加载到页缓冲器电路中，第一命令信号指示程序数据输入并响应于第二命令信号产生编程电压，第二命令信号指示 编程启动。 在程序电压达到预定目标之后，对EEPROM单元进行编程。 验证所有编程的EEPROM单元，以确保它们被正确编程。 如果EEPROM单元未正确编程，则重复编程，直到所有EEPROM单元都被正确编程。 每当重复编程时，逐步地增加编程电压。