公开(公告)号：US20200035834A1

公开(公告)日：2020-01-30

申请号：US16077846

申请日：2018-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Young Suk SONG ,  Hongda SUN ,  Guoying WANG ,  Wei LIU

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/44 ,  H01L29/66

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

公开(公告)号：US20190355763A1

公开(公告)日：2019-11-21

申请号：US16476578

申请日：2018-08-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiangbo CHEN ,  Youngsuk SONG ,  Wenjun HOU ,  Lei ZHAO ,  Guoying WANG

IPC: H01L27/12 ,  H01L27/32

Abstract: Provided are an array substrate, a display panel, a display apparatus and a preparation method therefor. The array substrate comprises: a base substrate; and multiple pixel units arranged on one side of the base substrate, each of the pixel units comprising: a thin-film transistor and an electroluminescent structure, and a shading structure located between the thin-film transistor and the base substrate, wherein the thin-film transistor comprises: an active layer located on one side, away from the base substrate, of the shading structure; the electroluminescent structure comprises: first electrodes for driving the pixel units; and one of the shading structure and the active layer is a same-layer structure fabricated by the same mask plate as the first electrodes so as to reduce the number of mask procedures required in preparation of an array substrate.

公开(公告)号：US20190267493A1

公开(公告)日：2019-08-29

申请号：US16330990

申请日：2018-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG ,  Hongda SUN

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.

公开(公告)号：US20190245018A1

公开(公告)日：2019-08-08

申请号：US16335484

申请日：2018-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Hongda SUN ,  Guoying WANG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3246 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/5253 ,  H01L51/56

Abstract: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.

公开(公告)号：US20190181248A1

公开(公告)日：2019-06-13

申请号：US16325981

申请日：2018-04-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Hongda SUN ,  Zhen SONG

IPC: H01L29/66 ,  H01L29/786

Abstract: A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.

公开(公告)号：US20190131457A1

公开(公告)日：2019-05-02

申请号：US16037481

申请日：2018-07-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

Abstract: The present disclosure relates to thin film transistor, fabricating method thereof, array substrate, and display device. A thin film transistor is provided that comprises: a substrate; an active layer, a first source electrode, and a first drain electrode disposed on a side of the substrate, the first source and drain electrodes being coupled to the active layer; and a first insulating layer and a gate disposed on a side of the active layer which is facing away from the substrate, the first insulating layer positioned between the active layer and the gate, wherein, the gate has a substantially same material as the first source and drain electrodes, and a main-body portion of the gate has a substantially same thickness as main-body portions of the first source and drain electrodes.

公开(公告)号：US20190067403A1

公开(公告)日：2019-02-28

申请号：US15969089

申请日：2018-05-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L27/32

Abstract: The present disclosure provides in some embodiments a back plate and a manufacturing method thereof. The back plate includes a base substrate and a driving TFT arranged on the base substrate. The driving transistor includes a light-shielding layer, a buffer layer and an active layer arranged sequentially on the base substrate. A gate insulation layer, a gate electrode, a source electrode, a drain electrode and an interlayer dielectric layer are arranged on the active layer. The buffer layer is provided with a first protrusion, and an orthogonal projection of the first protrusion onto the base substrate is located within an orthogonal projection of the gate electrode onto the base substrate.