公开(公告)号：US20220165900A1

公开(公告)日：2022-05-26

申请号：US17356194

申请日：2021-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fanli MENG ,  Jiangbo CHEN ,  Zeyuan LI ,  Yao LU ,  Ning DANG

IPC: H01L31/08 ,  H01L31/0224 ,  A61B6/00

Abstract: The present disclosure provides a flat panel detector and a medical image detection device. The flat panel detector includes a base substrate, wherein the base substrate is divided into a plurality of detection units, each detection unit includes a first absorbing layer and a second absorbing layer, both of which are arranged on the base substrate in a laminating manner, the second absorbing layer is located on one side, away from the base substrate, of the first absorbing layer, and an energy level of rays absorbed by the second absorbing layer is smaller than that of rays absorbed by the first absorbing layer; a voltage supply electrode structure; and an output circuit, electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorbing layer and a second detection signal of the second absorbing layer.

公开(公告)号：US20220093658A1

公开(公告)日：2022-03-24

申请号：US17406951

申请日：2021-08-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiangbo CHEN ,  Fanli MENG ,  Zeyuan LI ,  Yao LU ,  Liye DUAN ,  Yanzhao LI

IPC: H01L27/146

Abstract: A detection substrate and a ray detector are disclosed. The detection substrate includes a base substrate; a plurality of detection pixel circuits, located on the base substrate; a first passivation layer, located on the side, facing away from the base substrate, of the detection pixel circuits; a planarization layer, located on the side, facing away from the base substrate, of the first passivation layer, where the surface of the side, facing away from the first passivation layer, of the planarization layer is a plane; and a plurality of photosensitive devices; where the photosensitive devices are electrically connected to the detection pixel circuits in a one-to-one correspondence through vias penetrating through the first passivation layer and the planarization layer, and each photosensitive device includes a first portion and a second portion.

公开(公告)号：US20220037550A1

公开(公告)日：2022-02-03

申请号：US16765476

申请日：2019-12-24

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Kui LIANG ,  Dali LIU ,  Jiangbo CHEN ,  Shuo ZHANG ,  Fan LI ,  Da LI

IPC: H01L31/119 ,  H01L27/144 ,  H01L31/20 ,  H01L31/0224

Abstract: A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

公开(公告)号：US20180277685A1

公开(公告)日：2018-09-27

申请号：US15804016

申请日：2017-11-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Youngsuk SONG

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L21/44

CPC classification number: H01L29/78618 ,  H01L21/44 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a thin film transistor includes: providing a substrate having a first surface and a second surface which are opposed to each other; forming a metal layer on the first surface of the substrate and patterning the metal layer to form a source electrode and a drain electrode; forming a semiconductor layer on the metal layer; forming a first insulating area and a gate electrode on the semiconductor layer; forming a second insulating layer on the semiconductor layer and the gate electrode; and forming a source lead and a drain lead on the second insulating layer, wherein the source lead passes through the second insulating layer and the semiconductor layer and is coupled to the source electrode, and the drain lead passes through the second insulating layer and the semiconductor layer and is coupled to the drain electrode.

公开(公告)号：US20160336349A1

公开(公告)日：2016-11-17

申请号：US14435772

申请日：2014-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongfang WANG ,  Jiangbo CHEN

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1214 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02672 ,  H01L29/045 ,  H01L29/786 ,  H01L29/7869

Abstract: The present invention provides a thin film transistor, a fabricating method thereof, an array substrate and a display device. The fabricating method of the thin film transistor of the present invention comprises: forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film; and heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer.

Abstract translation: 本发明提供一种薄膜晶体管，其制造方法，阵列基板和显示装置。 本发明的薄膜晶体管的制造方法包括：在基板上形成与其接触的感应层膜和氧化物活性层膜，所述氧化物活性层膜设置在所述诱导层膜的上方或下方; 并加热经过上述步骤的衬底，通过诱导诱导层膜使氧化物活性层膜结晶以形成结晶氧化物活性层。

公开(公告)号：US20220231086A1

公开(公告)日：2022-07-21

申请号：US17476343

申请日：2021-09-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fanli MENG ,  Jiangbo CHEN ,  Zeyuan LI

IPC: H01L27/30 ,  G01T1/20

Abstract: A detection substrate and a flat-panel detector, and relates to the technical field of photoelectric detection. The detection substrate can improve radiation resistance and prolong a service life without increasing the thickness of a scintillator layer. The detection substrate includes a plurality of detection pixel units arranged in an array. Each of the detection pixel units includes: a transistor, a photoelectric conversion section, and a scintillator layer, with the photoelectric conversion section disposed between the transistor and the scintillator layer, the photoelectric conversion section includes a radiation sensitive layer and a photosensitive unit, which are laminated in arrangement; the radiation sensitive layer is configured to absorb rays and convert the rays into carriers; and the photosensitive unit is configured to at least absorb visible light and convert the visible light into carriers. The present disclosure is applicable to the production of the detection substrates.

公开(公告)号：US20200044000A1

公开(公告)日：2020-02-06

申请号：US16429265

申请日：2019-06-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhen SONG ,  Guoying WANG ,  Jiangbo CHEN

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52

Abstract: The disclosure discloses a display substrate, a method for fabricating the same, and a display device. The display substrate includes: a light-shielding metal layer pattern on a base substrate; a photo-sensitive sensing element layer on the light-shielding metal layer pattern, wherein an orthographic projection of the photo-sensitive sensing element layer onto the base substrate lies in an overlapping area of orthographic projections of the light-shielding metal layer pattern and the sub-pixel areas onto the base substrate; a buffer layer on the photo-sensitive sensing element layer; and a compensation control TFT and a signal line on the buffer layer, wherein a source electrode of the compensation control TFT is electrically connected with the light-shielding metal layer pattern, and the signal line is electrically connected with the photo-sensitive sensing element layer.

公开(公告)号：US20190378930A1

公开(公告)日：2019-12-12

申请号：US15999687

申请日：2017-12-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Young Suk SONG ,  Wei LI ,  Liangchen YAN

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L27/32

Abstract: Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.

公开(公告)号：US20180366565A1

公开(公告)日：2018-12-20

申请号：US15736799

申请日：2017-07-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Quanhu LI ,  Jingang FANG

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L21/423 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12 ,  H01L21/768 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/423 ,  H01L21/443 ,  H01L21/465 ,  H01L21/47635 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: A thin film transistor, a method for fabricating the same, a display panel and a display device are disclosed. The method includes forming an active layer on a substrate; forming an insulating layer on the active layer and an exposed surface of the substrate; forming a first conductive layer on the insulating layer; patterning the first conductive layer and the insulating layer to form a first stack on the active layer, wherein the first stack includes a first portion of the first conductive layer and a first portion of the insulating layer, the first stack acts as a gate stack and the active layer includes a channel region below the gate stack and a source region and a drain region at two sides of the channel region; and performing plasma treatment on the first conductive layer, the source region and the drain region, to improve conductivity.

公开(公告)号：US20240170505A1

公开(公告)日：2024-05-23

申请号：US17777422

申请日：2021-05-31

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Fanli MENG ,  Zeyuan LI ,  Jiangbo CHEN ,  Ding DING

IPC: H01L27/144 ,  H01L23/31 ,  H01L27/092 ,  H01L27/12

CPC classification number: H01L27/1443 ,  H01L23/3171 ,  H01L27/0922 ,  H01L27/1259

Abstract: The present disclosure relates to an X-RAY detector including a base substrate and a plurality of detection units arranged on the base substrate. Each detection unit includes a light conversion element and a switching transistor, the light conversion element is configured to convert an optical signal into an electrical signal, and the switching transistor is configured to output the electrical signal to a reading signal line. Each detection unit further includes a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto the base substrate fully covers an orthogonal projection of the switching transistor onto the base substrate. The present disclosure further relates to a method for forming the X-RAY detector.