公开(公告)号：US20070026637A1

公开(公告)日：2007-02-01

申请号：US10570668

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/3226

摘要： Since a supporting wafer contains nitrogen of 1×1014 atmos/cm3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017 atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in the wafer during the heat treatment after the bonding. Consequently, the contamination from the metal impurities in the active layer can be reduced.

摘要翻译： 由于支撑晶片含有1×10 14大气压/厘米3的氮和间隙氧原子浓度，具有13×10 17原子的Oi（旧ASTM） / cm 3，因此在接合之后的热处理期间，活性层晶片中的一部​​分金属杂质和接合晶片中的金属杂质可以通过晶片中的BMD和OSF捕获 。 因此，能够降低活性层中的金属杂质的污染。

公开(公告)号：US20060228846A1

公开(公告)日：2006-10-12

申请号：US11277857

申请日：2006-03-29

申请人： Akihiko Endo ,  Toshiaki Ono ,  Wataru Sugimura

发明人： Akihiko Endo ,  Toshiaki Ono ,  Wataru Sugimura

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/02032 ,  H01L21/76254

摘要： A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first silicon substrate, laminating a second silicon substrate onto the first silicon substrate via the oxide film and thereby forming a laminated body of the first silicon substrate and the second silicon substrate bonded with each other, and heating the laminated body at a predetermined temperature and thereby separating the first silicon substrate at the ion implantation area and thereby obtaining an SOI substrate wherein a thin film SOI layer is formed on the second silicon substrate via the oxide film. The first silicon substrate is formed by slicing an ingot free of an agglomerate of vacancy type point defects and an agglomerate of interstitial silicon type point defects grown by a CZ method in an inorganic atmosphere including hydrogen. The layer transferred wafer separated from the SOI layer is used again as the first silicon substrate.

摘要翻译： 制造SOI衬底的方法包括以下步骤：至少在第一硅衬底的前表面上形成氧化膜，从第一硅衬底的表面注入氢离子，从而在第一硅衬底的内部形成离子注入区 第一硅衬底，通过氧化膜将第二硅衬底层压到第一硅衬底上，从而形成彼此接合的第一硅衬底和第二硅衬底的层压体，并在预定温度下加热层压体 在离子注入区域分离第一硅衬底，从而获得SOI衬底，其中通过氧化物膜在第二硅衬底上形成薄膜SOI层。 第一硅衬底是通过在包括氢的无机气氛中通过切割没有空位型点缺陷的团块的锭和通过CZ方法生长的间隙硅型点缺陷的团块来形成的。 从SOI层分离的转移晶片的层被再次用作第一硅衬底。

公开(公告)号：US20050227462A1

公开(公告)日：2005-10-13

申请号：US11101870

申请日：2005-04-08

申请人： Yoshio Murakami ,  Toru Yamazaki ,  Yoshiro Aoki ,  Akihiko Endo

发明人： Yoshio Murakami ,  Toru Yamazaki ,  Yoshiro Aoki ,  Akihiko Endo

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/425 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/76243

摘要： A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

摘要翻译： 一种SOI晶片的制造方法，其特征在于，在炉内对晶片进行热处理，形成包括硅载体，含有氧化物的绝缘层和表面硅层的SOI晶片的步骤， 来自炉的SOI晶片保持在250℃至800℃的温度下，以将SOI晶片转移到含有氢或水的气氛中。 按照该顺序执行步骤。

公开(公告)号：US5029181A

公开(公告)日：1991-07-02

申请号：US604988

申请日：1990-10-25

申请人： Akihiko Endo ,  Masao Nakano ,  Hiroshi Takeda

发明人： Akihiko Endo ,  Masao Nakano ,  Hiroshi Takeda

IPC分类号： H04J13/00 ,  G01R31/28 ,  H04B1/707

CPC分类号： H04B1/7085

摘要： A simulated reception signal is produced by modulating an AC signal having the same frequency as the reception frequency with a modulating signal produced using two pseudo noise codes delayed by 1/2 or 3 chips. In a calibrating mode, in which the simulated reception signal is chosen, a reference voltage to a comparator for synchronization detection and an output voltage of a differential amplifier for synchronization holding are stored in a CPU. In a receiving mode, in which an actual reception signal is chosen, the CPU controls the comparator and a pseudo noise generator which is included in a delay lock loop on the basis of the stored data.

摘要翻译： 通过使用延迟1/2或3个码片的两个伪噪声码产生的调制信号调制具有与接收频率相同频率的AC信号来产生模拟接收信号。 在选择模拟接收信号的校准模式中，将用于同步检测的比较器的参考电压和用于同步保持的差分放大器的输出电压存储在CPU中。 在选择实际接收信号的接收模式中，CPU基于所存储的数据来控制比较器和包含在延迟锁定环路中的伪噪声发生器。