公开(公告)号：US6037243A

公开(公告)日：2000-03-14

申请号：US138114

申请日：1998-08-21

申请人： Jeong Sook Ha ,  Kang Ho Park

发明人： Jeong Sook Ha ,  Kang Ho Park

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/425

CPC分类号： H01L21/3083 ,  Y10S438/947

摘要： This invention relates to a method for manufacturing silicon nitride films on a silicon substrate through chemical reaction of a surface, and then manufacturing a silicon nanometer structure using the silicon nitride films under ultra high vacuum condition. A method for manufacturing silicon nano structures using silicon nitride film, includes the following steps: performing a cleaning process of the silicon surface and implanting nitrogen ions having low energy into the silicon substrate; performing first heat treatment of the silicon substrate having ions implanted therin, and cooling the silicon substrate to room temperature to form monolayer thick silicon nitride islands; implanting oxygen gas on the silicon surface on which silicon nitride islands are used as masks while maintaining the surface of the silicon substrate at a temperature of 750 to 800.degree. C. and forming silicon nano pillars by etching silicon portions selectively; and removing the silicon nitride islands by implanting reactive ions having energy of 100 to 200 eV on the surface of silicon nano pillars and performing second heat treatment at the temperature of 800 to 900.degree. C.

摘要翻译： 本发明涉及通过表面的化学反应在硅衬底上制造氮化硅膜的方法，然后在超高真空条件下制造使用氮化硅膜的硅纳米结构。 一种使用氮化硅膜制造硅纳米结构的方法，包括以下步骤：对硅表面进行清洗处理，并将低能量氮离子注入硅衬底; 对具有离子注入的硅衬底进行第一热处理，并将硅衬底冷却至室温以形成单层厚的氮化硅岛; 在将硅衬底的表面保持在750-800℃的温度下，在其上使用氮化硅岛的硅表面上注入氧气，并通过选择性地蚀刻硅部分形成硅纳米柱; 并且通过在硅纳米柱的表面上注入具有100至200eV的能量的活性离子并在800-900℃的温度下进行第二次热处理来除去氮化硅岛。