公开(公告)号：US06399984B1

公开(公告)日：2002-06-04

申请号：US09882242

申请日：2001-06-15

申请人： Yider Wu ,  Mark T. Ramsbey ,  Chi Chang ,  Yu Sun ,  Tuan Duc Pham ,  Jean Y. Yang

发明人： Yider Wu ,  Mark T. Ramsbey ,  Chi Chang ,  Yu Sun ,  Tuan Duc Pham ,  Jean Y. Yang

IPC分类号： H01L29788

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A predetermined species such as nitrogen is placed at an interface between a bit line junction and a dielectric layer of a control dielectric structure of a flash memory device to minimize degradation of such an interface by minimizing formation of interface defects during program or erase operations of the flash memory device. The predetermined species such as nitrogen is implanted into a bit line junction of the flash memory device. A thermal process is performed that heats up the semiconductor wafer such that the predetermined species such as nitrogen implanted within the semiconductor wafer thermally drifts to the interface between the bit line junction and the control dielectric structure during the thermal process. The predetermined species such as nitrogen at the interface minimizes formation of interface defects and thus degradation of the interface with time during the program or erase operations of the flash memory device.

摘要翻译： 将诸如氮的预定物质放置在闪存存储器件的控制电介质结构的位线结和电介质层之间的界面处，以通过在编程或擦除操作期间最小化界面缺陷的形成来最小化这种界面的劣化 闪存设备。 将诸如氮的预定物质注入到闪速存储器件的位线结中。 执行加热半导体晶片的热处理，使得在热处理期间注入到半导体晶片内的预定物质例如氮漂移到位线结和控制电介质结构之间的界面。 在闪存器件的编程或擦除操作期间，预定种类例如接口处的氮使界面缺陷的形成最小化，从而使界面的时效性降低。