公开(公告)号：US5569502A

公开(公告)日：1996-10-29

申请号：US118829

申请日：1993-09-10

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Masatomo Sumiya

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Masatomo Sumiya

IPC分类号： C23C16/24 ,  C23C16/44 ,  B06B1/00

CPC分类号： C23C16/4415 ,  C23C16/24

摘要： A process and apparatus for depositing a film as desired on the surface of a substrate yet at a low temperature, said process comprising introducing a product gas into a film deposition chamber having provided therein a substrate being mounted on a support, and depositing a film on the surface of said substrate by activating said product gas inside said film deposition chamber while applying ultrasonic oscillation to said substrate.

摘要翻译： 一种用于在低温下在基材表面上根据需要沉积膜的方法和装置，所述方法包括将产物气体引入成膜室中，所述膜沉积室中设置有将基材安装在载体上，并将膜沉积在 通过在所述成膜室内激活所述产品气体，同时向所述基板施加超声振荡，从而使所述基板的表面。