公开(公告)号：US5569502A

公开(公告)日：1996-10-29

申请号：US118829

申请日：1993-09-10

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Masatomo Sumiya

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Masatomo Sumiya

IPC分类号： C23C16/24 ,  C23C16/44 ,  B06B1/00

CPC分类号： C23C16/4415 ,  C23C16/24

摘要： A process and apparatus for depositing a film as desired on the surface of a substrate yet at a low temperature, said process comprising introducing a product gas into a film deposition chamber having provided therein a substrate being mounted on a support, and depositing a film on the surface of said substrate by activating said product gas inside said film deposition chamber while applying ultrasonic oscillation to said substrate.

摘要翻译： 一种用于在低温下在基材表面上根据需要沉积膜的方法和装置，所述方法包括将产物气体引入成膜室中，所述膜沉积室中设置有将基材安装在载体上，并将膜沉积在 通过在所述成膜室内激活所述产品气体，同时向所述基板施加超声振荡，从而使所述基板的表面。

公开(公告)号：US08377211B2

公开(公告)日：2013-02-19

申请号：US12309533

申请日：2007-02-01

申请人： Masatomo Sumiya ,  Mikk Lippmaa ,  Tsuyoshi Ohnishi ,  Eiji Fujimoto ,  Hideomi Koinuma

发明人： Masatomo Sumiya ,  Mikk Lippmaa ,  Tsuyoshi Ohnishi ,  Eiji Fujimoto ,  Hideomi Koinuma

IPC分类号： C23C16/00

CPC分类号： C23C16/481

摘要： Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.

摘要翻译： 公开了一种真空处理装置，其在真空室内被加热的基板上进行气相沉积; 所述装置，其中所述室具有形成在所述室的一部分中的透光窗; 光透射窗和保持基板的保持部通过与室内的其他部分分离的直线空间连接; 激光发射器安装在透光窗外; 并且激光发射器通过线性空间向基板发射激光束，从而加热基板。 该装置能够激光加热，消除诸如激光输出减少的常规缺点。

公开(公告)号：US20120067410A1

公开(公告)日：2012-03-22

申请号：US13258205

申请日：2010-03-29

申请人： Nobuyuki Matsuki ,  Yoshihiro Irokawa ,  Kenji Itaka ,  Hideomi Koinuma ,  Masatomo Sumiya

发明人： Nobuyuki Matsuki ,  Yoshihiro Irokawa ,  Kenji Itaka ,  Hideomi Koinuma ,  Masatomo Sumiya

IPC分类号： H01L31/07 ,  H01L29/161 ,  H01L29/47 ,  H01L29/20

CPC分类号： H01L51/4213 ,  Y02E10/549

摘要： A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride semiconductors, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses this Schottky-barrier junction element 1, with its photoelectric conversion section including the Schottky junction. A photoelectric conversion element uses this Schottky-barrier junction element 1, with its conversion section for interconverting light and electricity including the Schottky junction.

摘要翻译： 肖特基势垒接合元件1在有机半导体3和有机导体4之间具有肖特基势垒结。无机半导体3是氮化物半导体，Si，GaAs，CdS，CdTe，CuInGaSe，InSb，PbTe，PbS ，Ge，InN，GaSb和SiC。 太阳能电池使用该肖特基势垒接合元件1，其光电转换部分包括肖特基结。 光电转换元件使用该肖特基势垒结元件1，其转换部分用于包括肖特基结的光和电相互转换。

公开(公告)号：US20100058987A1

公开(公告)日：2010-03-11

申请号：US12309533

申请日：2007-02-01

申请人： Masatomo Sumiya ,  Mikk Lippmaa ,  Tsuyoshi Ohnishi ,  Eiji Fujimoto ,  Hideomi Koinuma

发明人： Masatomo Sumiya ,  Mikk Lippmaa ,  Tsuyoshi Ohnishi ,  Eiji Fujimoto ,  Hideomi Koinuma

IPC分类号： C23C16/54

CPC分类号： C23C16/481

摘要： Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.

摘要翻译： 公开了一种真空处理装置，其在真空室内被加热的基板上进行气相沉积; 所述装置，其中所述室具有形成在所述室的一部分中的透光窗; 光透射窗和保持基板的保持部通过与室内的其他部分分离的直线空间连接; 激光发射器安装在透光窗外; 并且激光发射器通过线性空间向基板发射激光束，从而加热基板。 该装置能够激光加热，消除诸如激光输出减少的常规缺点。

公开(公告)号：US20070042560A1

公开(公告)日：2007-02-22

申请号：US10562265

申请日：2004-06-15

申请人： Masatomo Sumiya ,  Shunro Fuke

发明人： Masatomo Sumiya ,  Shunro Fuke

IPC分类号： H01L21/76

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40

摘要： The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1) , the Ga face (2) growing in +c face, and the N face (3) growing in −c face.

摘要翻译： 本发明提供一种用于在衬底上生长薄氮化物膜的方法和薄氮化物膜器件，其中可以通过低温工艺来控制薄氮化物膜的极性。 在用于在衬底上生长薄氮化物膜的方法中，在交流面蓝宝石（Al 2 O 3 3 ）衬底（1），Ga面（2）在+ c面生长，N面（3）生长在-c面。

公开(公告)号：US06239005B1

公开(公告)日：2001-05-29

申请号：US09275453

申请日：1999-03-24

申请人： Masatomo Sumiya ,  Mamoru Yoshimoto ,  Shunro Fuke

发明人： Masatomo Sumiya ,  Mamoru Yoshimoto ,  Shunro Fuke

IPC分类号： H01L2136

CPC分类号： H01S5/0213 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/465 ,  H01S5/0425 ,  H01S5/18375 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxially grown on the metal layer. Particularly, on a c-face of a sapphire substrate, a platinum layer is epitaxially grown in a crystal orientation of (111) by sputtering, while the sapphire substrate is heat at about 400-700° C. After annealing at 600-900° C., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer with a thickness of 500-2000 Å by MOVPE, while the sapphire substrate is heated at about 600° C. Finally, a single crystal gallium nitride layer is epitaxially grown on the buffer layer by MOVPE, while the sapphire substrate is heated at about 1000° C.

摘要翻译： 在直接在金属层上形成单晶半导体的方法中，在具有单晶结构的电绝缘基板的表面上外延生长金属层，并且在金属层上外延生长单晶半导体层。 特别地，在蓝宝石衬底的c面上，通过溅射以（111）的晶体取向外延生长铂层，同时蓝宝石衬底在约400-700℃下加热。在600-900°退火后 通过MOVPE在厚度为500-2000的铂层上外延生长由氮化镓制成的缓冲层，同时蓝宝石衬底在约600℃下加热。最后，单晶氮化镓层外延生长 通过MOVPE在缓冲层上生长，而蓝宝石衬底在约1000℃下加热。

公开(公告)号：US08888914B2

公开(公告)日：2014-11-18

申请号：US12761898

申请日：2010-04-16

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01J9/12 ,  H01J1/34 ,  H01J40/06

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性 晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

公开(公告)号：US20070132050A1

公开(公告)日：2007-06-14

申请号：US11511497

申请日：2006-08-29

申请人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

发明人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC分类号： H01L27/14

CPC分类号： H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

摘要： Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

摘要翻译： 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。

公开(公告)号：US20100197069A1

公开(公告)日：2010-08-05

申请号：US12761898

申请日：2010-04-16

申请人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

发明人： Tokuaki Nihashi ,  Masatomo Sumiya ,  Minoru Hagino ,  Shunro Fuke

IPC分类号： H01L31/18 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01L31/1856 ,  C30B29/403 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/1848 ,  H01L31/1852 ,  Y10S117/902 ,  Y10S117/915

摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

摘要翻译： 本发明的目的是提供一种允许较高量子效率的光电表面部件。 为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性 晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

公开(公告)号：US07525131B2

公开(公告)日：2009-04-28

申请号：US11511497

申请日：2006-08-29

申请人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

发明人： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC分类号： H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/12 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/15 ,  H01L33/00 ,  H01L29/74 ,  H01L31/062 ,  H01L31/00

CPC分类号： H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

摘要： Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

摘要翻译： 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。