公开(公告)号：US20050205212A1

公开(公告)日：2005-09-22

申请号：US10905172

申请日：2004-12-20

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32412

摘要： A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.

摘要翻译： 等离子体源包括含有工艺气体的腔室。 该室具有室顶部，其包括由在水平方向上延伸的电介质材料形成的第一部分。 腔室顶部的第二部分由在垂直方向上从第一部分延伸高度的电介质材料形成。 腔室顶部的顶部由导电材料形成，该导电材料在水平方向上延伸穿过第二部分的长度。 无线电频率天线位于第一部分和第二部分中的至少一个附近。 射频天线将射频电流引入到腔室中，激发和离子化处理气体，以便在腔室中产生等离子体。