公开(公告)号：US20060289799A1

公开(公告)日：2006-12-28

申请号：US11376522

申请日：2006-03-15

申请人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

发明人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

IPC分类号： H01J37/08

CPC分类号： H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

公开(公告)号：US07132672B2

公开(公告)日：2006-11-07

申请号：US10817755

申请日：2004-04-02

申请人： Steven R. Walther ,  Rajesh Dorai ,  Harold Persing ,  Jay Scheuer ,  Bon-Woong Koo ,  Bjorn O. Pedersen ,  Chris Leavitt ,  Timothy Miller

发明人： Steven R. Walther ,  Rajesh Dorai ,  Harold Persing ,  Jay Scheuer ,  Bon-Woong Koo ,  Bjorn O. Pedersen ,  Chris Leavitt ,  Timothy Miller

IPC分类号： H01J37/244

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/24405

摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

摘要翻译： 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

公开(公告)号：US20050287307A1

公开(公告)日：2005-12-29

申请号：US10874944

申请日：2004-06-23

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

公开(公告)号：US20050223991A1

公开(公告)日：2005-10-13

申请号：US10817755

申请日：2004-04-02

申请人： Steven Walther ,  Rajesh Dorai ,  Harold Persing ,  Jay Scheuer ,  Bon-Woong Koo ,  Bjorn Pedersen ,  Chris Leavitt ,  Timothy Miller

发明人： Steven Walther ,  Rajesh Dorai ,  Harold Persing ,  Jay Scheuer ,  Bon-Woong Koo ,  Bjorn Pedersen ,  Chris Leavitt ,  Timothy Miller

IPC分类号： H01J37/244 ,  H01J37/32 ,  C23C14/48

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/24405

摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

摘要翻译： 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

公开(公告)号：US20050205211A1

公开(公告)日：2005-09-22

申请号：US10805966

申请日：2004-03-22

申请人： Vikram Singh ,  Timothy Miller ,  Paul Murphy ,  Harold Persing ,  Jay Scheuer ,  Donna Smatlak ,  Edmund Winder ,  Robert Bettencourt

发明人： Vikram Singh ,  Timothy Miller ,  Paul Murphy ,  Harold Persing ,  Jay Scheuer ,  Donna Smatlak ,  Edmund Winder ,  Robert Bettencourt

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32412

摘要： A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.

摘要翻译： 公开了一种等离子体浸没离子注入装置和方法以及等离子体室，每个等离子体室被配置成提供均匀的离子通量并消散二次电子的作用。 本发明包括一个等离子体室，该等离子体室包括一个电介质构造和一个可以被液体冷却的导电顶部。 此外，本发明提供了一种射频（RF）天线配置，其包括耦合到RF源的有源天线和不直接耦合到任何RF源但可以接地的寄生天线。 RF天线允许调谐RF耦合。

公开(公告)号：US08728587B2

公开(公告)日：2014-05-20

申请号：US13168649

申请日：2011-06-24

申请人： George Papasouliotis ,  Deven M. Raj ,  Harold Persing

发明人： George Papasouliotis ,  Deven M. Raj ,  Harold Persing

IPC分类号： C23C14/28 ,  H05H1/24

CPC分类号： H01J37/32412 ,  H01J37/32972

摘要： A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant conditions, as well as information about historical data to improve repeatability. In one embodiment, a plasma is created, a first sensing system is used to monitor a composition of the plasma and a second sensing system is used to monitor a total number of ions implanted. Information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber. In another embodiment, this information is combined with historical data to control one or more operating parameters in the plasma chamber. In another embodiment, the thickness of material on the walls is measured, and used to modify one or more operating parameters.

摘要翻译： 公开了提高各种等离子体工艺的重复性的等离子体处理装置和方法。 实际的植入剂量是植入条件以及各种其他参数的函数。 该方法使用当前植入条件的知识，以及关于历史数据的信息以改善重复性。 在一个实施例中，产生等离子体，第一感测系统用于监测等离子体的组成，第二感测系统用于监测植入的离子的总数。 关于等离子体组成和每脉冲剂量的信息用于控制等离子体室中的一个或多个操作参数。 在另一个实施例中，该信息与历史数据组合以控制等离子体室中的一个或多个操作参数。 在另一个实施例中，测量壁上材料的厚度，并用于修改一个或多个操作参数。

公开(公告)号：US20070084564A1

公开(公告)日：2007-04-19

申请号：US11163303

申请日：2005-10-13

申请人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

发明人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

IPC分类号： C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32412 ,  H01L21/26513 ,  H01L21/26526 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/66803

摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.

摘要翻译： 掺杂装置包括腔室和等离子体源。 等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。 压板位于室中，靠近等离子体源。 压板支撑具有平面和非平面特征的衬底。 选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征 基板的表面。

公开(公告)号：US20050260354A1

公开(公告)日：2005-11-24

申请号：US10850222

申请日：2004-05-20

申请人： Vikram Singh ,  Atul Gupta ,  Harold Persing ,  Steven Walther ,  Anne Testoni

发明人： Vikram Singh ,  Atul Gupta ,  Harold Persing ,  Steven Walther ,  Anne Testoni

IPC分类号： H01J37/32 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/32495 ,  H01J37/32412

摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.

摘要翻译： 用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源 从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面 通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤 或更多的基材。

公开(公告)号：US20050205212A1

公开(公告)日：2005-09-22

申请号：US10905172

申请日：2004-12-20

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32412

摘要： A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.

摘要翻译： 等离子体源包括含有工艺气体的腔室。 该室具有室顶部，其包括由在水平方向上延伸的电介质材料形成的第一部分。 腔室顶部的第二部分由在垂直方向上从第一部分延伸高度的电介质材料形成。 腔室顶部的顶部由导电材料形成，该导电材料在水平方向上延伸穿过第二部分的长度。 无线电频率天线位于第一部分和第二部分中的至少一个附近。 射频天线将射频电流引入到腔室中，激发和离子化处理气体，以便在腔室中产生等离子体。

公开(公告)号：US20060043316A1

公开(公告)日：2006-03-02

申请号：US10458037

申请日：2003-06-10

申请人： Reuel Liebert ,  Harold Persing ,  James Buff

发明人： Reuel Liebert ,  Harold Persing ,  James Buff

IPC分类号： H01J37/08

CPC分类号： H01J37/1471 ,  H01J37/3171

摘要： An ion implanter includes an ion source for generating an ion beam, a target site for supporting a target for ion implantation and a beamline defining a beam path between the ion source and the target site. In one aspect, a magnetic steerer is disposed between the ion source and the target site for at least partially correcting unwanted deviation of the ion beam from the beam path. The magnetic steerer may position the ion beam relative to an entrance aperture of an ion optical element. In another aspect, the beamline includes a deceleration stage for decelerating the ion beam from a first transport energy to a second transport energy. The deceleration stage includes two or more electrodes, wherein at least one of the electrodes is a grid electrode positioned in the beam path.

摘要翻译： 离子注入机包括用于产生离子束的离子源，用于支撑用于离子注入的靶的靶位点和限定离子源与靶位点之间的束路径的束线。 一方面，磁离子源设置在离子源和目标部位之间，用于至少部分地校正离子束与束路径的不期望的偏差。 磁力搅拌器可以相对于离子光学元件的入口孔定位离子束。 在另一方面，束线包括用于将离子束从第一输送能量减速到第二输送能量的减速阶段。 减速阶段包括两个或更多个电极，其中至少一个电极是位于光束路径中的栅电极。