Method of fabricating EPROM device with metallic source connections
    1.
    发明授权
    Method of fabricating EPROM device with metallic source connections 失效
    用金属源连接制造EPROM器件的方法

    公开(公告)号:US5210046A

    公开(公告)日:1993-05-11

    申请号:US632101

    申请日:1990-12-20

    Applicant: Pier L. Crotti

    Inventor: Pier L. Crotti

    CPC classification number: H01L27/11517 H01L27/115

    Abstract: An integrated EPROM device which can be manufactured using standard high definition photolithographic techniques with unit cells of markedly reduced dimensions as compared to the minimum dimensions that can be achieved with the prior art, has field isolation structures between adjacent cells along rows of the array in the form of continuous isolation strips which extend for the whole column length of the array, thus avoiding the problems associated with photolithographic defining rectangular geometries. The electrical interconnection between the sources of the cells of each row is achieved by a special metal source "line", formed between two adjacent gate lines, using for the purpose a conformally deposited metal layer from which both the drain contacts and these source interconnection metal "lines" are created in a self-alignment way.

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