Transistor structure
    1.
    发明授权

    公开(公告)号:US10367068B2

    公开(公告)日:2019-07-30

    申请号:US15427656

    申请日:2017-02-08

    Abstract: A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.

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