Semiconductor device and method of operating a semiconductor device
    1.
    发明授权
    Semiconductor device and method of operating a semiconductor device 有权
    半导体器件及半导体器件的操作方法

    公开(公告)号:US09584104B2

    公开(公告)日:2017-02-28

    申请号:US14214801

    申请日:2014-03-15

    CPC classification number: H03K5/1252

    Abstract: A semiconductor device comprising a substrate and an electronic circuit thereon is described. The electronic circuit comprises a first voltage provider node, a second voltage provider node, and an intermediary node connected to the first and second voltage provider node by a first and second network with a first and second resistance, respectively. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor. The first network is arranged to reduce the first resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. Similarly, the second network is arranged to reduce the second resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa.A method of operating a semiconductor device is also disclosed.

    Abstract translation: 还公开了一种操作半导体器件的方法。

    SEMICONDUCTOR DEVICE AND METHOD OF OPERATING A SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF OPERATING A SEMICONDUCTOR DEVICE 有权
    半导体器件和操作半导体器件的方法

    公开(公告)号:US20150263713A1

    公开(公告)日:2015-09-17

    申请号:US14214801

    申请日:2014-03-15

    CPC classification number: H03K5/1252

    Abstract: A semiconductor device comprising a substrate and an electronic circuit thereon is described. The electronic circuit comprises a first voltage provider node, a second voltage provider node, and an intermediary node connected to the first and second voltage provider node by a first and second network with a first and second resistance, respectively. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor. The first network is arranged to reduce the first resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. Similarly, the second network is arranged to reduce the second resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa.A method of operating a semiconductor device is also disclosed.

    Abstract translation: 描述了包括基板和其上的电子电路的半导体器件。 电子电路分别包括第一电压提供器节点,第二电压提供器节点和通过具有第一和第二电阻的第一和第二网络连接到第一和第二电压提供器节点的中间节点。 衬底易于导通衬底电流。 半导体器件还包括衬底电流传感器。 第一网络布置成响应于衬底电流传感器而减小第一电阻,信号传递衬底电流的增加,反之亦然。 类似地,第二网络被布置成响应于衬底电流传感器而减小第二电阻,表明衬底电流的增加,反之亦然。 还公开了一种操作半导体器件的方法。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20150260766A1

    公开(公告)日:2015-09-17

    申请号:US14214796

    申请日:2014-03-15

    CPC classification number: G01R31/3004 G01R31/002

    Abstract: A semiconductor device, comprising a substrate and an electronic circuit formed thereon is described. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor, which comprises a sensing line for sensing the potential at a charge collecting region; a supply node; and a current source connected between the supply node and the charge collecting region. The current source is arranged to inject a stationary current into the charge collecting region when the potential at the charge collecting region is below the supply potential. The sensing line comprises a monoflop, which is arranged to assume an unstable state when the potential at its input has exceeded a threshold and to return to a stable state when the potential at its input has remained below the threshold for at least a time period.

    Abstract translation: 描述了一种包括基板和形成在其上的电子电路的半导体器件。 衬底易于导通衬底电流。 半导体器件还包括衬底电流传感器,其包括用于感测电荷收集区域的电位的感测线; 供应节点; 以及连接在电源节点和电荷收集区域之间的电流源。 电流源设置成当电荷收集区域处的电位低于电源电位时,将稳定电流注入电荷收集区域。 感测线包括单波形,其在输入端的电位超过阈值时被布置为呈现不稳定状态,并且当输入端的电位已经保持低于阈值至少一段时间时返回到稳定状态。

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