公开(公告)号：US07800157B2

公开(公告)日：2010-09-21

申请号：US12174090

申请日：2008-07-16

申请人： Akihiro Ryusenji ,  Minori Kajimoto ,  Yugo Ide

发明人： Akihiro Ryusenji ,  Minori Kajimoto ,  Yugo Ide

IPC分类号： H01L29/94

CPC分类号： H01L27/11524 ,  H01L27/115 ,  H01L27/11521

摘要： According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device including: sequentially forming a first insulating film, a first electrode film, a second insulating film, and a second electrode film on a substrate; forming a groove that separates the second electrode film, the second insulating film and the first electrode film; forming an insulating film inside the groove so that an upper surface thereof is positioned between upper surfaces of the second electrode film and the second insulating film; forming an overhung portion on the second electrode film so as to overhang on the insulating film by performing a selective growth process; and forming a low resistance layer at the overhung portion and the second electrode film by performing an alloying process.

摘要翻译： 根据本发明的一个方面，提供了一种用于制造半导体器件的方法，包括：在衬底上依次形成第一绝缘膜，第一电极膜，第二绝缘膜和第二电极膜; 形成分隔第二电极膜，第二绝缘膜和第一电极膜的槽; 在所述槽内形成绝缘膜，使得其上表面位于所述第二电极膜的上表面和所述第二绝缘膜之间; 在所述第二电极膜上形成悬垂部分，以通过进行选择性生长工艺在绝缘膜上悬垂; 以及通过进行合金化处理在所述悬臂部分和所述第二电极膜上形成低电阻层。