公开(公告)号：US20200013685A1

公开(公告)日：2020-01-09

申请号：US16572751

申请日：2019-09-17

Applicant: Adriaan Johan VAN LEEST ,  Anagnostis TSIATMA ,  Paul Christiaan HINNEN ,  Elliott Gerard McNAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMA ,  Paul Christiaan HINNEN ,  Elliott Gerard McNAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

IPC: H01L21/66 ,  G03F9/00 ,  G01N21/95

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.