Process for modifying dielectric materials
    1.
    发明申请
    Process for modifying dielectric materials 审中-公开
    电介质材料改性方法

    公开(公告)号:US20070054501A1

    公开(公告)日:2007-03-08

    申请号:US11210546

    申请日:2005-08-23

    IPC分类号: H01L21/31

    CPC分类号: H01L21/3105 H01L21/02101

    摘要: The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, e.g., by contact angles at the liquid/surface interface.

    摘要翻译: 本发明涉及一种用于改性材料的方法,包括例如与通过诸如等离子体蚀刻加工的制造工艺损坏的电子基板,半导体芯片,晶片等相关的介电材料。 所描述的方法提高了例如通过杨氏模量测量的结构完整性,以及例如通过液体/表面界面处的接触角测量的疏水性。