公开(公告)号：US20050286299A1

公开(公告)日：2005-12-29

申请号：US11116440

申请日：2005-04-28

申请人： Yasuhiro Tomita ,  Hitoshi Suwa ,  Manabu Komiya ,  Tamas Toth ,  Jeffrey Jacob ,  Avi Parvin ,  Noam Eshel

发明人： Yasuhiro Tomita ,  Hitoshi Suwa ,  Manabu Komiya ,  Tamas Toth ,  Jeffrey Jacob ,  Avi Parvin ,  Noam Eshel

IPC分类号： G11C11/34 ,  G11C16/34

CPC分类号： G11C16/3454

摘要： In conventional memory arrays in which a bit line is shared by memory cells, a cell current flows over into neighbor cell(s) in a program verify process, and therefore, the threshold of a memory cell to be programmed is erroneously determined to be lower. Therefore, in a program verify process, a control circuit 3 writes a fail value to a neighbor cell buffer 5 when all neighbor cell(s) having an offset of n or less from a memory cell to be programmed are in the erased state, and when otherwise, writes a pass value to the neighbor cell buffer 5. The control circuit 3 verifies input write data and also verifies data stored in the neighbor cell buffer(s). In the latter verify process, a verify voltage higher than an ordinary one is used to compensate for the leakage of cell current.

摘要翻译： 在存储器单元共享位线的常规存储器阵列中，在程序验证过程中，单元电流流过相邻单元，因此，要被编程的存储器单元的阈值被错误地确定为较低 。 因此，在程序验证处理中，当从要被编程的存储单元的偏移量为n以下的所有相邻单元都处于被擦除状态时，控制电路3向相邻单元缓冲器5写入失败值， 否则，将通过值写入邻居单元缓冲器5。 控制电路3验证输入写入数据，并验证存储在相邻单元缓冲器中的数据。 在后一验证过程中，使用高于常规验证电压的验证电压来补偿电池电流的泄漏。

公开(公告)号：US07313649B2

公开(公告)日：2007-12-25

申请号：US11116440

申请日：2005-04-28

申请人： Yasuhiro Tomita ,  Hitoshi Suwa ,  Manabu Komiya ,  Tamas Toth ,  Jeffrey Allan Jacob ,  Avi Parvin ,  Noam Eshel

发明人： Yasuhiro Tomita ,  Hitoshi Suwa ,  Manabu Komiya ,  Tamas Toth ,  Jeffrey Allan Jacob ,  Avi Parvin ,  Noam Eshel

IPC分类号： G06F12/00

CPC分类号： G11C16/3454

摘要： In conventional memory arrays in which a bit line is shared by memory cells, a cell current flows over into neighbor cell(s) in a program verify process, and therefore, the threshold of a memory cell to be programmed is erroneously determined to be lower. Therefore, in a program verify process, a control circuit 3 writes a fail value to a neighbor cell buffer 5 when all neighbor cell(s) having an offset of n or less from a memory cell to be programmed are in the erased state, and when otherwise, writes a pass value to the neighbor cell buffer 5. The control circuit 3 verifies input write data and also verifies data stored in the neighbor cell buffer(s). In the latter verify process, a verify voltage higher than an ordinary one is used to compensate for the leakage of cell current.

摘要翻译： 在存储器单元共享位线的常规存储器阵列中，在程序验证过程中，单元电流流过相邻单元，因此，要被编程的存储器单元的阈值被错误地确定为较低 。 因此，在程序验证处理中，当从要被编程的存储单元的偏移量为n以下的所有相邻单元都处于被擦除状态时，控制电路3向相邻单元缓冲器5写入失败值， 否则，将通过值写入邻居单元缓冲器5。 控制电路3验证输入写入数据，并验证存储在相邻单元缓冲器中的数据。 在后一验证过程中，使用高于常规验证电压的验证电压来补偿电池电流的泄漏。