Defect monitoring in semiconductor device fabrication
    1.
    发明授权
    Defect monitoring in semiconductor device fabrication 有权
    半导体器件制造中的缺陷监测

    公开(公告)号:US08339449B2

    公开(公告)日:2012-12-25

    申请号:US12537269

    申请日:2009-08-07

    IPC分类号: H04N7/18

    摘要: A method of forming a device is presented. The method includes providing a substrate containing at least a partially formed device thereon. The device comprises at least one defect site. A pixilated image of the defect site is acquired, and each pixel comprises a grey level value (GLV). Surrounding noises of the defect site is eliminated. A point of the image is identified as the center of the defect. A plurality of iterations to exclude outer edge pixels surrounding the center of the defect image is performed. The defect is categorized as a killer or non-killer defect.

    摘要翻译: 提出了一种形成装置的方法。 该方法包括提供在其上至少包含部分形成的器件的衬底。 该装置包括至少一个缺陷部位。 获取缺陷部位的像素化图像,并且每个像素包括灰度值(GLV)。 消除了缺陷部位的周围噪声。 图像的一个点被识别为缺陷的中心。 执行多个迭代以排除围绕缺陷图像的中心的外边缘像素。 该缺陷被归类为杀伤或非杀伤性缺陷。