公开(公告)号：US6057628A

公开(公告)日：2000-05-02

申请号：US110286

申请日：1998-07-06

申请人： Hendrik J. Viljoen ,  Barend R. Jooste

发明人： Hendrik J. Viljoen ,  Barend R. Jooste

IPC分类号： H01L41/047 ,  H01L41/18 ,  H01L41/04

CPC分类号： H01L41/0477 ,  H01L41/18

摘要： Disclosed is a piezoelectric system which demonstrates piezoelectric properties over a large temperature range of from room temperature to approximately 1360 degrees centigrade. The piezoelectric system is sequentially comprised of a first electrically conductive layer, a layer of (Ta.sub.2 O.sub.5) in other than a monoclinic phase, (preferably orthorhombic demonstrating small x-ray crystalographic and peaks), and a second electrically conductive layer. A preferred method of fabrication involves sputter deposition of both said layer of (Ta.sub.2 O.sub.5) and said second electrically conductive layer.

摘要翻译： 公开了一种在室温至约1360摄氏度的大温度范围内显示压电性能的压电体系。 压电体系依次包括第一导电层，除单斜晶相以外的（Ta 2 O 5）层（优选为正交的，表示小的x射线结晶图和1101峰），以及 第二导电层。 优选的制造方法包括溅射沉积所述（Ta 2 O 5）层和所述第二导电层。