公开(公告)号：US07049053B2

公开(公告)日：2006-05-23

申请号：US10458850

申请日：2003-06-11

Applicant: Vijayakumar Ramachandrarao ,  Hyun-Mog Park ,  Subramanyam Iyer ,  Bob Turkot

Inventor： Vijayakumar Ramachandrarao ,  Hyun-Mog Park ,  Subramanyam Iyer ,  Bob Turkot

IPC: G03F7/00

CPC classification number: G03F7/168 ,  G03F7/40

Abstract: Polymer aggregates in a photoresist layer may be dissolved or reduced in dimension by treatment with supercritical carbon dioxide. The supercritical carbon dioxide may be used before and/or after development of the photoresist. The SCCO2 treatment causes swelling of the photoresist and may allow polymer aggregates in the photoresist to be dissolved. Controlled release of the carbon dioxide de-swells the photoresist, resulting in reduced line edge roughness of openings in the photoresist and reduced resistance of metal lines formed in the openings.

Abstract translation: 光致抗蚀剂层中的聚合物聚集体可以通过用超临界二氧化碳处理而溶解或减小尺寸。 超临界二氧化碳可以在光致抗蚀剂显影之前和/或之后使用。 SCCO 2处理引起光致抗蚀剂的溶胀，并且可以使光致抗蚀剂中的聚合物聚集体溶解。 二氧化碳的控制释放促使光致抗蚀剂膨胀，导致光致抗蚀剂中开口的线边缘粗糙度降低，并减少在开口中形成的金属线的电阻。