公开(公告)号：US5382831A

公开(公告)日：1995-01-17

申请号：US990222

申请日：1992-12-14

申请人： Eugenia M. Atakov ,  John J. Clement ,  Brian C. Lee

发明人： Eugenia M. Atakov ,  John J. Clement ,  Brian C. Lee

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/528 ,  H01L23/53214 ,  H01L2924/0002

摘要： For enhanced resistance to electromigration failure, a thin metal film interconnect on an integrated circuit chip should use multiple parallel minimum-width lines when the minimum linewidth is less than one and one-half times the mean grain size of the metal film. When the interconnect is longer than a certain predetermined length, then the multiple lines of the interconnect should have intermediate interconnections or bridges between neighboring ones of the multiple lines. When the interconnect is many times longer than the predetermined length, then the bridges define slots between the neighboring lines, and the slots should have a length of about the predetermined length. When the interconnect is many times longer than the predetermined length and the interconnect has more than two parallel lines, then the slots on one side of a parallel line should be staggered or offset with respect to the slots on the other side of the parallel line. The predetermined length should be about ten to twenty times the mean length of polycrystalline segments in a line of the minimum linewidth. For a 1.25 .mu.m minimum linewidth and a 7,600 .ANG. thick Al-1% Cu film having a 3.0 micron mean grain size, the predetermined length should be about 46 to 92 microns.

摘要翻译： 为了增强对电迁移失败的抵抗力，当最小线宽小于金属膜的平均晶粒尺寸的一倍半时，集成电路芯片上的薄金属薄膜互连应使用多条平行的最小宽度线。 当互连长于一定的预定长度时，互连的多条线应该具有在多条线之间的相邻线之间的中间互连或桥。 当互连比预定长度多许多倍时，桥接器在相邻线之间限定狭缝，并且槽应该具有约预定长度的长度。 当互连比预定长度多许多倍并且互连具有多于两条平行线时，则平行线一侧上的槽应相对于平行线另一侧上的槽交错或偏移。 预定长度应为最小线宽线中多晶片段的平均长度的约10至20倍。 对于1.25μm的最小线宽和平均粒径为3.0微米的7600 ANGSTROM厚的Al-1％Cu膜，预定长度应为约46至92微米。

公开(公告)号：US4810619A

公开(公告)日：1989-03-07

申请号：US84464

申请日：1987-08-12

申请人： Thomas R. Pampalone ,  Brian C. Lee ,  Edward C. Douglas

发明人： Thomas R. Pampalone ,  Brian C. Lee ,  Edward C. Douglas

IPC分类号： G03F7/09 ,  G03C5/18

CPC分类号： G03F7/091

摘要： For fine line lithography of a reflective substrate, a layer of titanium nitride is applied between the reflective surface and the photoresist that is absorbant at the wavelength of light used to expose the photoresist. The resolution of the photoresist is improved, even when an absorbant dye is used in the photoresist. The titanium nitride can be readily removed at the same time as the reflective layer is patterned, thereby avoiding the need of a separate step to remove the absober layer during etching of the reflective substrate.

摘要翻译： 对于反射基板的细线光刻，将氮化钛层施加在反射表面和在用于曝光光致抗蚀剂的光的波长处的吸收剂的光致抗蚀剂之间。 光致抗蚀剂的分辨率提高，即使在光致抗蚀剂中使用吸收性染料也是如此。 在反射层被图案化的同时可以容易地去除氮化钛，从而避免在蚀刻反射基板期间需要单独的步骤去除绝缘层。