公开(公告)号：US5759876A

公开(公告)日：1998-06-02

申请号：US551588

申请日：1995-11-01

Applicant: Scott G. Singlevich ,  Bradley S. Holway ,  Kurt D. Humphrey ,  Brian Scott Poarch ,  Michael R. Reeder ,  Neal J. Verzwyvelt

Inventor： Scott G. Singlevich ,  Bradley S. Holway ,  Kurt D. Humphrey ,  Brian Scott Poarch ,  Michael R. Reeder ,  Neal J. Verzwyvelt

IPC: H01L21/82 ,  H01L23/525 ,  H01L27/10

CPC classification number: H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011

Abstract: An antifuse includes a metal cap layer located at the second barrier layer of the antifuse to improve the antifuse yield and long term reliability. An antifuse further includes one or more interfacial oxide film layers surrounding an antifuse dielectric layer to provide narrowing of the antifuse programming voltage distribution and to further improve the antifuse yield and long term reliability.

Abstract translation: 反熔丝包括位于反熔丝的第二阻挡层处的金属盖层，以提高反熔丝产率和长期可靠性。 反熔丝还包括围绕反熔丝电介质层的一个或多个界面氧化物膜层，以提供反熔丝编程电压分布变窄并进一步提高反熔丝产率和长期可靠性。