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公开(公告)号:US06337117B1
公开(公告)日:2002-01-08
申请号:US09343526
申请日:1999-06-30
IPC分类号: B32B302
CPC分类号: B82Y20/00 , B82Y10/00 , B82Y30/00 , G11B7/00455 , G11B7/0052 , G11B7/0055 , G11B7/24 , G11B7/243 , G11B7/2531 , G11B2007/24304 , G11B2007/24314 , G11B2007/24316 , G11B2007/2432 , G11B2007/24322 , G11B2007/24328 , Y10S428/913 , Y10S430/146 , Y10T428/21 , Y10T428/24405 , Y10T428/24413
摘要: An optical memory device comprising a luminous material capable of increasing and/or memorizing a photoluminescence intensity (hereinafter referred to as a “luminous intensity”) as a function of irradiation energy of excitation light. And the luminous material comprises nanoparticles, diameters of which are smaller than Bohr radius of the luminous material so that excitons generated in the nanoparticles undergo quantum containment state in which the electrons and holes are individually contained as a result of irradiation with excitation light.
摘要翻译: 一种光学存储器件,其包括能够增加和/或记忆光致发光强度的发光材料(以下称为“发光强度”),作为激发光的照射能量的函数。 并且发光材料包括其直径小于发光材料的玻尔半径的纳米颗粒,使得在纳米颗粒中产生的激子经受量子容纳状态,其中由于激发光的照射而单独地包含电子和空穴。