公开(公告)号：US08278179B2

公开(公告)日：2012-10-02

申请号：US12720476

申请日：2010-03-09

Applicant: Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

Inventor： Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

IPC: H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/823821

Abstract: A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.

Abstract translation: 一种形成半导体结构的方法包括在衬底的表面提供包括鳍的衬底，以及形成鳍状场效应晶体管（FinFET），其还包括在鳍上形成栅叠层; 在所述栅极堆叠的侧壁上形成薄的间隔物; 并从翅片开始外延生长外延区域。 在外延生长外延区域的步骤之后，在间隔物的外边缘上形成主间隔物。 在形成主间隔物的步骤之后，进行深源极/漏极注入以形成用于FinFET的深源极/漏极区域。

公开(公告)号：US20110223736A1

公开(公告)日：2011-09-15

申请号：US12720476

申请日：2010-03-09

Applicant: Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

Inventor： Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

IPC: H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/823821

Abstract: A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.

Abstract translation: 一种形成半导体结构的方法包括在衬底的表面提供包括鳍的衬底，以及形成鳍状场效应晶体管（FinFET），其还包括在鳍上形成栅叠层; 在所述栅极堆叠的侧壁上形成薄的间隔物; 并从翅片开始外延生长外延区域。 在外延生长外延区域的步骤之后，在间隔物的外边缘上形成主间隔物。 在形成主间隔物的步骤之后，进行深源极/漏极注入以形成用于FinFET的深源极/漏极区域。