公开(公告)号：US20130001704A1

公开(公告)日：2013-01-03

申请号：US13170751

申请日：2011-06-28

申请人： Wen-Han Wang ,  Chen-Chih Wu ,  Sheng-Fang Cheng ,  Kuo-Ji Chen

发明人： Wen-Han Wang ,  Chen-Chih Wu ,  Sheng-Fang Cheng ,  Kuo-Ji Chen

IPC分类号： H01L27/06

CPC分类号： H01L28/20 ,  H01L27/0629

摘要： A device includes a metal-oxide-semiconductor (MOS) device, which includes a gate electrode and a source/drain region adjacent the gate electrode. A first and a second contact plug are formed directly over and electrically connected to two portions of a same MOS component, wherein the same MOS component is one of the gate electrode and the source/drain region. The same MOS component is configured to be used as a resistor that is connected between the first and the second contact plugs.

摘要翻译： 一种器件包括金属氧化物半导体（MOS）器件，其包括栅电极和与栅电极相邻的源/漏区。 第一和第二接触插塞形成在相同的MOS部件的两部分上方并电连接，其中相同的MOS部件是栅极电极和源极/漏极区域之一。 相同的MOS部件被配置为用作连接在第一和第二接触插塞之间的电阻器。

公开(公告)号：US08648425B2

公开(公告)日：2014-02-11

申请号：US13170751

申请日：2011-06-28

申请人： Wen-Han Wang ,  Chen-Chih Wu ,  Sheng-Fang Cheng ,  Kuo-Ji Chen

发明人： Wen-Han Wang ,  Chen-Chih Wu ,  Sheng-Fang Cheng ,  Kuo-Ji Chen

IPC分类号： H01L27/06

CPC分类号： H01L28/20 ,  H01L27/0629

摘要： A device includes a metal-oxide-semiconductor (MOS) device, which includes a gate electrode and a source/drain region adjacent the gate electrode. A first and a second contact plug are formed directly over and electrically connected to two portions of a same MOS component, wherein the same MOS component is one of the gate electrode and the source/drain region. The same MOS component is configured to be used as a resistor that is connected between the first and the second contact plugs.

摘要翻译： 一种器件包括金属氧化物半导体（MOS）器件，其包括栅电极和与栅电极相邻的源/漏区。 第一和第二接触插塞形成在相同的MOS部件的两部分上方并电连接，其中相同的MOS部件是栅极电极和源极/漏极区域之一。 相同的MOS部件被配置为用作连接在第一和第二接触插塞之间的电阻器。