公开(公告)号：US20120266452A1

公开(公告)日：2012-10-25

申请号：US13541468

申请日：2012-07-03

申请人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

发明人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

IPC分类号： H01C17/02

CPC分类号： H01C17/265 ,  H01L23/345 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0688 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/49087 ,  H01L2924/00

摘要： A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.

摘要翻译： 用于集成电路的微调电阻器使用加热器进行修整。 加热器选择性地耦合到电压源。 对加热器施加电压导致加热器温度升高并产生热量。 热量通过热分离器渗透到可调节电阻器。 当电阻器的温度增加到特定温度范围内的值时，可调整电阻器的电阻永久地增加或减小。

公开(公告)号：US20100073122A1

公开(公告)日：2010-03-25

申请号：US12562026

申请日：2009-09-17

申请人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

发明人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

IPC分类号： H01C7/00

CPC分类号： H01C17/265 ,  H01L23/345 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0688 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/49087 ,  H01L2924/00

摘要： A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.

摘要翻译： 用于集成电路的微调电阻器使用加热器进行修整。 加热器选择性地耦合到电压源。 对加热器施加电压导致加热器温度升高并产生热量。 热量通过热分离器渗透到可调节电阻器。 当电阻器的温度增加到特定温度范围内的值时，可调整电阻器的电阻永久地增加或减小。

公开(公告)号：US08400257B2

公开(公告)日：2013-03-19

申请号：US12862599

申请日：2010-08-24

申请人： Ting Fang Lim ,  Chengyu Niu ,  Olivier Le Neel ,  Calvin Leung

发明人： Ting Fang Lim ,  Chengyu Niu ,  Olivier Le Neel ,  Calvin Leung

IPC分类号： H01C1/012

CPC分类号： H01L23/5228 ,  H01C1/148 ,  H01C7/006 ,  H01L21/76834 ,  H01L21/76852 ,  H01L28/20 ,  H01L28/24 ,  H01L2221/1078 ,  H01L2924/0002 ,  Y10T29/49099 ,  H01L2924/00

摘要： The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.

摘要翻译： 本公开涉及一种薄膜电阻器结构，其包括电连接相邻互连结构的第一导体层的电阻元件。 电阻元件被作为电阻元件的稳定器和散热器的电介质盖层覆盖。 每个互连包括在第一导电层之上的第二导体层。 薄膜电阻器包括被氮化硅盖层覆盖的铬硅电阻元件。

公开(公告)号：US20120049997A1

公开(公告)日：2012-03-01

申请号：US12862599

申请日：2010-08-24

申请人： Ting Fang Lim ,  Chengyu Niu ,  Olivier Le Neel ,  Calvin Leung

发明人： Ting Fang Lim ,  Chengyu Niu ,  Olivier Le Neel ,  Calvin Leung

IPC分类号： H01C1/012 ,  H01C17/06

CPC分类号： H01L23/5228 ,  H01C1/148 ,  H01C7/006 ,  H01L21/76834 ,  H01L21/76852 ,  H01L28/20 ,  H01L28/24 ,  H01L2221/1078 ,  H01L2924/0002 ,  Y10T29/49099 ,  H01L2924/00

摘要： The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.

摘要翻译： 本公开涉及一种薄膜电阻器结构，其包括电连接相邻互连结构的第一导体层的电阻元件。 电阻元件被作为电阻元件的稳定器和散热器的电介质盖层覆盖。 每个互连包括在第一导电层之上的第二导体层。 薄膜电阻器包括被氮化硅盖层覆盖的铬硅电阻元件。

公开(公告)号：US08493171B2

公开(公告)日：2013-07-23

申请号：US13541468

申请日：2012-07-03

申请人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

发明人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

IPC分类号： H01C3/04 ,  H01C7/02

CPC分类号： H01C17/265 ,  H01L23/345 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0688 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/49087 ,  H01L2924/00

摘要： A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.

摘要翻译： 用于集成电路的微调电阻器使用加热器进行修整。 加热器选择性地耦合到电压源。 对加热器施加电压导致加热器温度升高并产生热量。 热量通过热分离器渗透到可调节电阻器。 当电阻器的温度增加到特定温度范围内的值时，可调整电阻器的电阻永久地增加或减小。

公开(公告)号：US08242876B2

公开(公告)日：2012-08-14

申请号：US12562026

申请日：2009-09-17

申请人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

发明人： Olivier Le Neel ,  Pascale Dumont-Girard ,  Chengyu Niu ,  Fuchao Wang ,  Michel Arnoux

IPC分类号： H01C3/04 ,  H01C7/02

CPC分类号： H01C17/265 ,  H01L23/345 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0688 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/49087 ,  H01L2924/00

摘要： A trimmable resistor for use in an integrated circuit is trimmed using a heater. The heater is selectively coupled to a voltage source. The application of voltage to the heater causes the heater temperature to increase and produce heat. The heat permeates through a thermal separator to the trimmable resistor. The resistance of the trimmable resistor is permanently increased or decreased when the temperature of the resistor is increased to a value within a particular range of temperatures.

摘要翻译： 用于集成电路的微调电阻器使用加热器进行修整。 加热器选择性地耦合到电压源。 对加热器施加电压导致加热器温度升高并产生热量。 热量通过热分离器渗透到可调节电阻器。 当电阻器的温度增加到特定温度范围内的值时，可调整电阻器的电阻永久地增加或减小。

公开(公告)号：US20070232060A1

公开(公告)日：2007-10-04

申请号：US11706502

申请日：2007-02-15

申请人： Chengyu Niu

发明人： Chengyu Niu

IPC分类号： H01L21/4763

CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865

摘要： A hybrid ionized physical vapor deposition technique to form liner films for vias, trenches, and other structures of integrated circuits. The techniques involves depositing liner materials within a via, hole, trench, or other structure in a neutral state, using, for example, physical vapor deposition. The liner materials deposited in this step have an ionization ratio of less than ten percent, and no bias potential is applied to an underlying substrate. The technique also involves depositing liner materials in ionized form in the same via using ionized physical vapor deposition. The liner materials deposited in this step have an ionization ratio far more than ten percent, and an optional bias potential may be applied to the underlying substrate. After liner film is formed, any other suitable actions or processing steps may take place including building additional metallization and dielectric layers and vias or trenches to produce a multi-level interconnect system.

摘要翻译： 混合电离物理气相沉积技术，用于形成用于通孔，沟槽和集成电路的其他结构的衬垫膜。 这些技术涉及使用例如物理气相沉积在中性状态的通孔，孔，沟槽或其它结构中沉积衬垫材料。 在该步骤中沉积的衬垫材料具有小于10％的电离比，并且没有偏压电位施加到下面的衬底。 该技术还涉及使用电离物理气相沉积在相同的通孔中沉积离子化形式的衬垫材料。 在该步骤中沉积的衬垫材料的离子化比率远高于百分之十，并且可以向底层衬底施加任选的偏置电位。 在形成衬里膜之后，可以发生任何其它合适的动作或处理步骤，包括建立附加的金属化和介电层以及通孔或沟槽以产生多层互连系统。