公开(公告)号：US20070274119A1

公开(公告)日：2007-11-29

申请号：US11837562

申请日：2007-08-13

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

摘要翻译： 用于铁电存储器的过驱动访问方法和装置。 当访问存储在铁电存储器中的数据时，本发明还提供过驱动电流以稍微降低/升高位线BL和BL'中的电压，以在升高板线/位位线之后进一步扩大它们之间的电压差， 线路电压采用板线/位线驱动方式。

公开(公告)号：US07548445B2

公开(公告)日：2009-06-16

申请号：US12128738

申请日：2008-05-29

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22 ,  G11C7/00 ,  G11C11/42

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

摘要翻译： 用于铁电存储器的过驱动访问方法和装置。 当访问存储在铁电存储器中的数据时，本发明还提供过驱动电流以稍微降低/升高位线BL和BL'中的电压，以在升高板线/位位线之后进一步扩大它们之间的电压差， 线路电压采用板线/位线驱动方式。

公开(公告)号：US07453714B2

公开(公告)日：2008-11-18

申请号：US11837562

申请日：2007-08-13

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22 ,  G11C7/00

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

摘要翻译： 用于铁电存储器的过驱动访问方法和装置。 当访问存储在铁电存储器中的数据时，本发明还提供过驱动电流以稍微降低/升高位线BL和BL'中的电压，以在升高板线/位位线之后进一步扩大它们之间的电压差， 线路电压采用板线/位线驱动方式。

公开(公告)号：US07307867B2

公开(公告)日：2007-12-11

申请号：US11270406

申请日：2005-11-09

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22 ,  G11C11/42 ,  G11C7/00 ,  G11C7/02

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

摘要翻译： 用于铁电存储器的过驱动访问方法和装置。 当访问存储在铁电存储器中的数据时，本发明还提供过驱动电流以稍微降低/升高位线BL和BL'中的电压，以在升高板线/位位线之后进一步扩大它们之间的电压差， 线路电压采用板线/位线驱动方式。

公开(公告)号：US06700811B1

公开(公告)日：2004-03-02

申请号：US10235688

申请日：2002-09-04

申请人： Chi-Ming Weng ,  Chin-Hsi Lin

发明人： Chi-Ming Weng ,  Chin-Hsi Lin

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A random access memory device includes a number of memory cells, with word lines, plate lines, and bit lines coupled to the memory cells. A switch, controlled by a word line, couples one end of the plate line to a first global plate line, while another switch, controlled by a second global plate line, couples the one end of the plate line to a reference voltage. The plate lines are charged by the first global plate line, which improves operational speed of the device and reduces loading of the word lines.

摘要翻译： 随机存取存储器件包括多个存储器单元，其中字线，板线和耦合到存储器单元的位线。 由字线控制的开关将板线的一端耦合到第一全局板线，而由第二全局板线控制的另一开关将板线的一端耦合到参考电压。 板线由第一全局板线充电，这提高了设备​​的操作速度并减少了字线的负载。

公开(公告)号：US06396730B1

公开(公告)日：2002-05-28

申请号：US09788373

申请日：2001-02-21

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A ferroelectric capacitor memory cell includes two transistors coupled to two ferroelectric capacitors respectively. The two ferroelectric capacitors store complementary polarization states, which defines a single data state of memory cell. The plate line is coupled to one end of the ferroelectric capacitors. The word line is coupled to the gates of the two transistors. The bit lines are coupled to the source/drain of the two transistors. According to the present invention, the disclosed detecting scheme precharges the bit lines to logical one voltage, setting the word line and plate line to logical zero voltage, stepping the word line from the initial logical zero voltage to logical one voltage, stepping the plate line from the initial logical zero voltage to logical one voltage, enabling the sensing amplifier to sense the differential charge on the bit lines, discharging the bit lines to restore the original data.

摘要翻译： 铁电电容器存储单元包括分别耦合到两个铁电电容器的两个晶体管。 两个铁电电容器存储互补极化状态，其定义存储单元的单个数据状态。 板线耦合到铁电电容器的一端。 字线耦合到两个晶体管的栅极。 位线耦合到两个晶体管的源极/漏极。 根据本发明，所公开的检测方案将位线预充电到逻辑一电压，将字线和板线设置为逻辑零电压，将字线从初始逻辑零电压步进到逻辑一电压，步进板线 从初始逻辑零电压到逻辑1电压，使感测放大器能够感测位线上的差分电荷，对位线进行放电以恢复原始数据。

公开(公告)号：US20080225570A1

公开(公告)日：2008-09-18

申请号：US12128738

申请日：2008-05-29

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22 ,  G11C7/00

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line /bit-line voltage using the plate-line /bit-line driven method.

摘要翻译： 用于铁电存储器的过驱动访问方法和装置。 当访问存储在铁电存储器中的数据时，本发明还提供过驱动电流以稍微降低/升高位线BL和BL'中的电压，以在升高板线/位位线之后进一步扩大它们之间的电压差， 线路电压采用板线/位线驱动方式。

公开(公告)号：US07394678B2

公开(公告)日：2008-07-01

申请号：US11771048

申请日：2007-06-29

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22 ,  G11C7/00

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

公开(公告)号：US20070247891A1

公开(公告)日：2007-10-25

申请号：US11771048

申请日：2007-06-29

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.

公开(公告)号：US20060056226A1

公开(公告)日：2006-03-16

申请号：US11270406

申请日：2005-11-09

申请人： Chin-Hsi Lin ,  Chi-Ming Weng

发明人： Chin-Hsi Lin ,  Chi-Ming Weng

IPC分类号： G11C11/22

CPC分类号： G11C14/00 ,  G11C11/22

摘要： An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the voltage difference therebetween after having raised the plate-line/bit-line voltage using the plate-line/bit-line driven method.