公开(公告)号：US08470657B1

公开(公告)日：2013-06-25

申请号：US13532293

申请日：2012-06-25

Applicant: Chih-Hsin Lo

Inventor： Chih-Hsin Lo

IPC: H01L21/8238 ,  H01L21/425 ,  H01L21/22 ,  H01L21/38

CPC classification number: H01L21/2254 ,  H01L21/02299 ,  H01L27/10876 ,  H01L27/10885

Abstract: An ion implantation method for semiconductor sidewalls includes steps of: forming a trench on a substrate, and the trench having a lower reflecting layer and two sidewalls adjacent to a bottom section; performing a plasma doping procedure to sputter conductive ions to the lower reflecting layer and the conductive ions being rebounded from the lower reflecting layer to adhere to the sidewalls to respectively form an adhesion layer thereon; and performing an annealing procedure to diffuse the conductive ions of the adhesion layer into the substrate to form a conductive segment. Thus, without damaging the substrate, the conductive segment having a high conductive ion doping concentration is formed at a predetermined region to satisfy semiconductor design requirements.

Abstract translation: 一种用于半导体侧壁的离子注入方法包括以下步骤：在衬底上形成沟槽，并且所述沟槽具有下反射层和邻近底部的两个侧壁; 执行等离子体掺杂方法以将导电离子溅射到下反射层，并且导电离子从下反射层反弹以粘附到侧壁以在其上分别形成粘合层; 并执行退火程序以将粘附层的导电离子扩散到衬底中以形成导电段。 因此，在不损坏衬底的情况下，在预定区域形成具有高导电离子掺杂浓度的导电段，以满足半导体设计要求。