公开(公告)号：US20090250816A1

公开(公告)日：2009-10-08

申请号：US12115300

申请日：2008-05-05

Applicant: Tsung Shune CHIN ,  Ting Yi Lin ,  Huai Yu Cheng ,  Jau Shiung Fang ,  Chin Fu Chiu

Inventor： Tsung Shune CHIN ,  Ting Yi Lin ,  Huai Yu Cheng ,  Jau Shiung Fang ,  Chin Fu Chiu

IPC: H01L23/52

CPC classification number: H01L21/2855 ,  H01L21/76843 ,  H01L21/76846

Abstract: Diffusion barrier layer is required during copper metallization in IC processing to prevent Cu from diffusion into the contacting silicon material and reacting to form copper silicide, which consumes Cu and deteriorates electrical conduction. With decreasing feature sizes of IC devices, such as those smaller than 90 nano-meter (nm), the thickness of diffusion barrier layer must be thinner than 10 nm. For example, a thickness of 2 nm will be called for at the feature size 27 nm. Disclosed in the present invention is ultra-thin barrier materials and structures based on tantalum silicon carbide, and its composite with another metallic layer Ru film. The retarding temperature, by which no evidence of copper diffusion can be identified, is 600˜850° C. depending on thickness, composition and film structure, at a thickness 1.6˜5 nm.

Abstract translation: 在IC加工中的铜金属化期间需要扩散阻挡层，以防止Cu扩散到接触硅材料中并且反应形成硅化铜，其消耗Cu并劣化导电性。 随着诸如那些小于90纳米（nm）的IC器件的特征尺寸的减小，扩散阻挡层的厚度必须比10nm薄。 例如，在特征尺寸27nm处将要求2nm的厚度。 在本发明中公开了基于钽碳化硅的超薄阻挡材料和结构，并且其与另一种金属层Ru膜的复合物。 取决于厚度，组成和膜结构，厚度为1.6〜5nm，延伸温度根据其中没有铜扩散的迹象可以确定为600〜850℃。