公开(公告)号：US20100135653A1

公开(公告)日：2010-06-03

申请号：US12502672

申请日：2009-07-14

Applicant: San-liang Lee ,  Chun-hung Cheng ,  Shuen-te Ji

Inventor： San-liang Lee ,  Chun-hung Cheng ,  Shuen-te Ji

IPC: H04B17/00

CPC classification number: H04B10/071 ,  H04B10/272

Abstract: An optical network monitoring system and method thereof are proposed. An optical line terminal (OLT) transmits a first optical signal to a plurality of optical interference devices. After the first optical signal passes the optical interference devices, the optical interference devices reflect back a plurality of second optical signals corresponding to the optical interference devices respectively to the optical line terminal. The second optical signals have different optical path differences. An optical/electrical converter unit converts each of the second optical signals into an electrical signal. A spectrum analyzing unit analyzes the electrical signal to extract a frequency component of the electrical signal, thus the fiber connection status to each optical network unit in the optical network system could be obtained. Therefore, the purpose of monitoring the optical network system is achieved.

Abstract translation: 提出了一种光网络监控系统及其方法。 光线路终端（OLT）将第一光信号发送到多个光干扰设备。 在第一光信号通过光干涉装置之后，光干涉装置将对应于光干涉装置的多个第二光信号分别反射到光线路终端。 第二光信号具有不同的光程差。 光/电转换器单元将每个第二光信号转换成电信号。 频谱分析单元分析电信号以提取电信号的频率分量，从而可以获得光网络系统中每个光网络单元的光纤连接状态。 因此，实现了光网络系统监控的目的。

公开(公告)号：US20130043513A1

公开(公告)日：2013-02-21

申请号：US13213211

申请日：2011-08-19

Applicant: Liang-An HUANG ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

Inventor： Liang-An HUANG ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

IPC: H01L27/06 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76232

Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Abstract translation: 浅沟槽隔离结构的制造方法包括以下步骤。 首先，提供衬底，其中在衬底中限定高电压器件区域。 然后，执行第一蚀刻工艺以部分地去除衬底，从而在高压器件区域中形成初步浅沟槽。 然后，进行第二蚀刻处理以进一步去除对应于初步浅沟槽的衬底，从而在高电压器件区域中形成第一浅沟槽。 之后，在第一浅沟槽中填充电介质材料，从而形成第一浅沟槽隔离结构。