公开(公告)号：US20130307044A1

公开(公告)日：2013-11-21

申请号：US13472337

申请日：2012-05-15

申请人： Hiroyuki Kinoshita ,  Ming Tian ,  Daisuke Maekawa ,  Naoki Watakabe ,  Seiji Shimabukuro ,  Hiroaki Iuchi ,  Hitomi Nakajima

发明人： Hiroyuki Kinoshita ,  Ming Tian ,  Daisuke Maekawa ,  Naoki Watakabe ,  Seiji Shimabukuro ,  Hiroaki Iuchi ,  Hitomi Nakajima

IPC分类号： H01L29/78 ,  H01L21/76

CPC分类号： H01L27/11524 ,  H01L21/764 ,  H01L29/66825 ,  H01L29/7881

摘要： Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. A blocking layer can be introduced to inhibit the formation of materials in the air gaps during subsequent process steps. The blocking layer may result in selective air gap formation or varying dimension of air gaps at cell areas relative to select gate areas in the memory. The blocking layer may result in a smaller vertical dimension for air gaps formed in the isolation regions at select gate areas relative to cell areas. The blocking layer may inhibit formation of air gaps at the select gate areas in other examples. Selective etching, implanting and different isolation materials may be used to selectively define air gaps.

摘要翻译： 提供了非易失性存储器阵列中的气隙隔离和相关制造工艺。 至少部分地可以通过在活动区域​​之间沿列方向延伸的位线空气间隙来提供衬底的相邻有源区域之间的电隔离。 可以引入阻挡层以在随后的工艺步骤期间抑制气隙中的材料的形成。 相对于存储器中的选择栅极区域，阻挡层可以导致在单元区域处的选择性气隙形成或气隙的变化尺寸。 阻挡层可以导致在相对于细胞区域的选择栅极区域处形成在隔离区域中的气隙的较小的垂直尺寸。 在其他实施例中，阻挡层可以抑制在选择栅极区域处形成气隙。 选择性蚀刻，植入和不同隔离材料可用于选择性地限定气隙。