公开(公告)号：US5670383A

公开(公告)日：1997-09-23

申请号：US440811

申请日：1995-05-15

申请人： Dante Edmond Piccone ,  Ahmad Nadeem Ishaque ,  Donald Earl Castleberry ,  Henri Max Rougeot ,  Peter Menditto

发明人： Dante Edmond Piccone ,  Ahmad Nadeem Ishaque ,  Donald Earl Castleberry ,  Henri Max Rougeot ,  Peter Menditto

IPC分类号： H01L27/146 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L31/107 ,  Y10S438/965

摘要： A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n type wells in the block surrounded by a foundation of p type semiconductor material. Each n type well is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the n type material in the well and the p type material foundation. The n type semiconductor material in each well has a substantially constant concentration of n type dopant throughout the n type material; the concentration of p type dopant in the foundation has a positive gradient extending from the p-n junction towards the second surface such that the peak surface electric field of the p-n junction in each well is less than the bulk electric field of the same p-n junction.

摘要翻译： 形成诸如APD阵列的平面半导体器件的方法包括以下步骤：根据所选择的图案，掺杂具有ap型掺杂剂的n型半导体材料的基本上平面的块，以在其中形成多个n型阱 由p型半导体材料的基础包围的块。 每个n型阱被设置成分别邻接块的第一表面，并且使得在井中的n型材料和p型材料基础之间形成相应的p-n结。 每个阱中的n型半导体材料在整个n型材料中具有基本恒定的n型掺杂剂的浓度; 基底中p型掺杂剂的浓度具有从p-n结朝向第二表面延伸的正梯度，使得每个阱中的p-n结的峰值表面电场小于相同p-n结的体电场。

公开(公告)号：US4084207A

公开(公告)日：1978-04-11

申请号：US725619

申请日：1976-09-22

申请人： Dante Edmond Piccone ,  Istvan Somos

发明人： Dante Edmond Piccone ,  Istvan Somos

IPC分类号： H03K17/082 ,  H02H3/20

CPC分类号： H03K17/0824

摘要： An overvoltage responsive triggering circuit for a main high power thyristor comprises a plurality of n auxiliary thyristors and electric energy storing means connected in series across said main thyristor. The auxiliary thyristors are poled to conduct forward current in the same direction as said main thyristor and have an aggregate forward breakdown voltage greater than a predetermined threshold magnitude. Said threshold magnitude is greater than the aggregate forward voltage of said n auxiliary thyristors minus the forward breakdown voltage of one of said auxiliary thyristors. Between the anode and another electrode of said one auxiliary thyristor there is connected secondary voltage breakdown means having a blocking voltage less than the forward breakdown voltage of said one auxiliary thyristor, whereby said triggering circuit becomes conductive in the breakdown mode at said threshold voltage magnitude.