公开(公告)号：US4814290A

公开(公告)日：1989-03-21

申请号：US114933

申请日：1987-10-30

申请人： Jeffrey R. Barber ,  Harish N. Kotecha ,  David D. Meyer ,  David Stanasolovich

发明人： Jeffrey R. Barber ,  Harish N. Kotecha ,  David D. Meyer ,  David Stanasolovich

IPC分类号： H01L21/76 ,  H01L21/225 ,  H01L21/762 ,  H01L29/78 ,  H01L21/302

CPC分类号： H01L21/2253 ,  H01L21/76202 ,  H01L21/76216

摘要： A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the "bird's beak" region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.