公开(公告)号：US07547560B2

公开(公告)日：2009-06-16

申请号：US11519614

申请日：2006-09-12

申请人： Oliver Desmond Patterson ,  David M. Shuttleworth ,  Bradley J. Albers ,  Werner Weck ,  Gregory Brown

发明人： Oliver Desmond Patterson ,  David M. Shuttleworth ,  Bradley J. Albers ,  Werner Weck ,  Gregory Brown

IPC分类号： H01L21/00

CPC分类号： H01L22/20 ,  G01R31/2894 ,  H01L21/76892

摘要： A method for improving semiconductor yield by in-line repair of defects during manufacturing comprises inspecting dies on a wafer after a selected layer is formed on the dies, identifying defects in each of the dies, classifying the identified defects as killer or non-critical, for each killer defect determining an action to correct the defect, repairing the defect and returning the wafer to a next process step. Also disclosed is a method for determining an efficient repair process by dividing the die into a grid and using analysis of the grid to find a least invasive repair.

摘要翻译： 通过在制造过程中对缺陷的在线修复来提高半导体产量的方法包括：在模具上形成所选择的层之后检查晶片上的管芯，识别每个管芯中的缺陷，将所识别的缺陷分类为杀伤或非关键的， 对于每个杀手缺陷，确定纠正缺陷的动作，修复缺陷并将晶片返回到下一个处理步骤。 还公开了一种通过将模具分成网格并利用网格分析来找到最小侵入性修复来确定有效修复过程的方法。