公开(公告)号：US20050257187A1

公开(公告)日：2005-11-17

申请号：US10844794

申请日：2004-05-13

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Dov Remm ,  Alan Rosenbluth ,  Shlomo Shlafman ,  Zheng Chen ,  Maharaj Mukherjee

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Dov Remm ,  Alan Rosenbluth ,  Shlomo Shlafman ,  Zheng Chen ,  Maharaj Mukherjee

IPC分类号： G03F1/14 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A method is described for performing model-based optical proximity corrections on a mask layout used in an optical lithography process having a plurality of mask shapes. Model-based optical proximity correction is performed by computing the image intensity on selected evaluation points on the mask layout. The image intensity to be computed includes optical flare and stray light effects due to the interactions between the shapes on the mask layout. The computation of the image intensity involves sub-dividing the mask layout into a plurality of regions, each region at an increasing distance from the evaluation point. The contributions of the optical flare and stray light effects due to mask shapes in each of the regions are then determined. Finally, all the contributions thus obtained are combined to obtain the final computation of the image intensity at the selected point.

摘要翻译： 描述了一种用于在具有多个掩模形状的光学光刻工艺中使用的掩模布局上执行基于模型的光学邻近校正的方法。 基于模型的光学邻近校正通过在掩模布局上的所选评估点上计算图像强度来执行。 要计算的图像强度由于掩模布局上的形状之间的相互作用而包括光学耀斑和杂散光效应。 图像强度的计算涉及将掩模布局分成多个区域，每个区域距离评估点增加的距离。 然后确定由于每个区域中的掩模形状引起的光学耀斑和杂散光效应的贡献。 最后，将所得到的所有贡献结合起来，以获得所选点处图像强度的最终计算。