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1.发明授权公开(公告)号：US12218157B2
公开(公告)日：2025-02-04
申请号：US17785989
申请日：2020-12-04
Applicant: ElectroPhotonic-IC Inc.
Inventor： Lawrence E. Tarof , William A. Hagley , Gudmundur A. Hjartarson , John William Mitchell Rogers
IPC: H01L27/144 , H04B10/60
Abstract: An optical receiver comprises a monolithically integrated pin photodiode (PIN) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PIN is fabricated from a second plurality of layers of the epitaxial layer stack. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance CPIN. The TIA capacitance CTIA may be matched to CPIN. Device parameters comprising: a thickness of the absorption layer, window area, and an optional mirror thickness of the PIN; device capacitance CPIN+CTIA; and feedback resistance RF of the TIA; are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication an integrated PIN-TIA, for applications such as a 1577 nm receiver for an ONU for 10G-PON.
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公开(公告)号：US20240421913A1
公开(公告)日：2024-12-19
申请号：US18746581
申请日：2024-06-18
Applicant: ElectroPhotonic-IC Inc.
Inventor： Lawrence E. TAROF , Vighen PACRADOUNI , Gudmundur A. HJARTARSON , Rony E. AMAYA , Richard D. CLAYTON
Abstract: A burst-mode optical receiver for an optical line terminal (OLT) of a passive optical network (PON) comprises a variable optical attenuator (VOA), a photodiode (PD) which may be a pin-PD or an APD, a transimpedance amplifier (TIA), and a feedback/control circuit for adjusting a bias voltage of the VOA in response to a burst-mode optical input signal level, to provide an attenuated optical output signal to the PD having a narrower dynamic range. Providing signal level adjustment in the optical domain mitigates the requirement for a burst-mode TIA with a large dynamic range and provides for fast switching. The burst-mode optical receiver may comprise a waveguide configuration, wherein a first electro-absorption modulator (EAM) is operable as the VOA and a second EAM is operable as the photodiode. A monolithically integrated electro-photonic circuit comprising the VOA, PD, TIA and feedback/control circuit may be provided using InP-based semiconductor materials.
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3.发明申请公开(公告)号：US20230019783A1
公开(公告)日：2023-01-19
申请号：US17785989
申请日：2020-12-04
Applicant: ElectroPhotonic-IC Inc.
Inventor： Lawrence E. TAROF , William A. HAGLEY , Gudmundur A. HJARTARSON , John William Mitchell ROGERS
IPC: H01L27/144
Abstract: An optical receiver comprises a monolithically integrated pin photodiode (PIN) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PIN is fabricated from a second plurality of layers of the epitaxial layer stack. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance CPIN. The TIA capacitance CTIA may be matched to CPIN. Device parameters comprising: a thickness of the absorption layer, window area, and an optional mirror thickness of the PIN; device capacitance CPIN+CTIA; and feedback resistance RF of the TIA; are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication an integrated PIN-TIA, for applications such as a 1577 nm receiver for an ONU for 10G-PON.
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公开(公告)号：US10693278B2
公开(公告)日：2020-06-23
申请号：US16555259
申请日：2019-08-29
Applicant: ElectroPhotonic-IC Inc.
Inventor： Christopher Watson , Kirill Pimenov , Valery Tolstikhin , Fang Wu , Yury Logvin
Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.
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5.发明授权公开(公告)号：US10673532B2
公开(公告)日：2020-06-02
申请号：US16708887
申请日：2019-12-10
Applicant: ElectroPhotonic-IC Inc.
Inventor： Gudmundur A. Hjartarson , William A. Hagley
IPC: H04B10/50 , G02B6/122 , H04B10/588 , G02B6/12
Abstract: An electro-absorption modulator (EAM) comprising an integrated high speed electro-optical control loop for very high-speed linearization and temperature compensation for analog optical data center interconnect applications is disclosed. The control loop can function in a stable manner because the electronics and optical components are monolithically integrated on a single substrate in small form factor. Because of the small size enabled by monolithic integration, the temperatures of the optical blocks and electronics blocks are tightly coupled, and the control loop time delays and phase delays are small enough to be stable, even for very high frequency operation. This arrangement enables a low cost, low power analog transmitter implementation for data center optical interconnect applications using advanced modulation schemes, such as PAM-4 and DP-QPSK.
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Patent Agency Ranking
公开(公告)号：US12199681B2
公开(公告)日：2025-01-14
申请号：US18743462
申请日：2024-06-14
Applicant: ElectroPhotonic-IC Inc.
Inventor： Gudmundur A. Hjartarson , Lawrence E. Tarof , Richard D. Clayton , Vighen Pacradouni
Abstract: Electro-photonic integrated circuits comprising optical transmitters and receivers are disclosed, wherein a monolithically integrated electro-absorption modulated laser (EML) is operable bidirectionally, in a transmitter mode and in a receiver mode. Vertically stacked waveguides are provided for a laser and an electro-absorption modulator (EAM). The laser and EAM are optically coupled using a laterally tapered vertical optical coupler. The EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the driving the laser and EAM as an EML, in transmitter mode. The electronic circuitry comprises a transimpedance amplifier (TIA). The EAM has first and second parts that can be independently biased. In receiver mode, the laser current is reduced to close to the threshold, and a first part of the EAM is biased to absorb residual laser light, and the second part of the EAM acts as a photodiode receiver to provide a photocurrent to the TIA.
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公开(公告)号：US11092762B2
公开(公告)日：2021-08-17
申请号：US16491712
申请日：2019-01-25
Applicant: ElectroPhotonic-IC Inc.
Inventor： Gudmundur A. Hjartarson , Craig Elliott
Abstract: An electro-optical module is provided in the form of a Ceramic Ball Grid Array (CBGA) optical package with a detachable fiber optic connector. The electro-optical module is surface mountable on a printed circuit boards (PCB) using standard electronics pick-and-place and reflow manufacturing technology. A module housing array of ultra-high-speed single mode fiber based optical transmit and/or receive devices provides for high density fiber interconnections and can be mounted directly on a PCB in close proximity to associated electronics. The resulting shorter electrical interconnects reduce losses and distortion of the high frequency electrical signals enabling lower power signals and lower error rates on the interfaces, for applications such as high-speed data center interconnects. Shorter electrical interconnects may also allow for simpler clock and data recovery circuits or, in some cases, complete elimination of some of these circuits.
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8.发明申请公开(公告)号：US20200116932A1
公开(公告)日：2020-04-16
申请号：US16708887
申请日：2019-12-10
Applicant: ElectroPhotonic-IC Inc.
Inventor： Gudmundur A. HJARTARSON , William A. HAGLEY
Abstract: An electro-absorption modulator (EAM) comprising an integrated high speed electro-optical control loop for very high-speed linearization and temperature compensation for analog optical data center interconnect applications is disclosed. The control loop can function in a stable manner because the electronics and optical components are monolithically integrated on a single substrate in small form factor. Because of the small size enabled by monolithic integration, the temperatures of the optical blocks and electronics blocks are tightly coupled, and the control loop time delays and phase delays are small enough to be stable, even for very high frequency operation. This arrangement enables a low cost, low power analog transmitter implementation for data center optical interconnect applications using advanced modulation schemes, such as PAM-4 and DP-QPSK.
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公开(公告)号：US10530484B2
公开(公告)日：2020-01-07
申请号：US16263169
申请日：2019-01-31
Applicant: ElectroPhotonic-IC Inc.
Inventor： Gudmundur A. Hjartarson , William A. Hagley
IPC: H04B10/50 , H04B10/588
Abstract: An integrated high speed electro-optical control loop for very high-speed linearization and temperature compensation of an electro-absorption modulator (EAM) for analog optical data center interconnect applications is disclosed. The control loop can function in a stable manner because the electronics and optical components are monolithically integrated on a single substrate in small form factor. Because of the small size enabled by monolithic integration, the temperatures of the optical blocks and electronics blocks are tightly coupled, and the control loop time delays and phase delays are small enough to be stable, even for very high frequency operation. This arrangement enables a low cost, low power analog transmitter implementation for data center optical interconnect applications using advanced modulation schemes, such as PAM-4 and DP-QPSK.
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公开(公告)号：US20250070886A1
公开(公告)日：2025-02-27
申请号：US18944497
申请日：2024-11-12
Applicant: ElectroPhotonic-IC Inc.
Inventor： Lawrence E. TAROF , Vighen PACRADOUNI , Francois TREMBLAY , Gudmundur A. HJARTARSON , Richard D. CLAYTON , Rony E. AMAYA
IPC: H04B10/60 , H01L27/144 , H04B10/70
Abstract: An optical receiver comprises a variable optical attenuator (VOA), a photodiode (PD) which may be a pin-PD or an APD, a transimpedance amplifier (TIA), and a feedback/control circuit for adjusting a bias voltage of the VOA in response to an optical input signal level, to provide an attenuated optical output signal to the PD having a narrower dynamic range. Providing signal level adjustment in the optical domain mitigates the requirement for a TIA with a large dynamic range and provides for fast switching. The optical receiver may comprise a waveguide configuration, wherein a first electro-absorption modulator (EAM) is operable as the VOA and a second EAM is operable as the photodiode. A monolithically integrated electro-photonic circuit comprising the VOA, PD, TIA and feedback/control circuit may be provided using InP-based semiconductor materials.
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