公开(公告)号：US20080017989A1

公开(公告)日：2008-01-24

申请号：US11491846

申请日：2006-07-24

申请人： Ki-Don Lee ,  Young-Joon Park ,  Ennis Takashi Ogawa

发明人： Ki-Don Lee ,  Young-Joon Park ,  Ennis Takashi Ogawa

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/522 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device 300 includes a metal line 304 formed in a first dielectric layer 302. A capping layer 306 is formed the metal line 304. A second dielectric layer 308 is formed over the first dielectric layer 302 and the metal line 304. A first via 310 is formed in the second dielectric layer 308 and in contact with the metal line 304. A second via 312 is formed in the second dielectric layer 308 and in contact with the metal line 304, and is positioned a distance away from the first via 310. An electrically isolated via 326 is formed in the second dielectric layer 308 and in contact with the metal line 304 and in between the first via 310 and the second via 312. A third dielectric layer 314 is formed over the second dielectric layer 308. First and second trenches 316, 318 are formed in the third dielectric layer 314 and in contact with the first via 310 and the second via 312, respectively. An isolated trench 328 is formed in the third dielectric layer and in contact with the isolated via 326. The isolated via 326 mitigates void formation and/or void migration during operation/conduction with electrons traveling from the first trench 316 to the second trench 318 via the metal line 304.

摘要翻译： 半导体器件300包括形成在第一电介质层302中的金属线304.覆盖层306形成为金属线304.第二电介质层308形成在第一电介质层302和金属线304上。第一通孔 310形成在第二电介质层308中并与金属线304接触。第二通孔312形成在第二电介质层308中并与金属线304接触，并且与第一通孔310相距一定距离 电绝缘通孔326形成在第二电介质层308中并与金属线304接触并且在第一通孔310和第二通孔312之间。第三电介质层314形成在第二介电层308上。首先 并且第二沟槽316,318分别形成在第三电介质层314中并与第一通孔310和第二通孔312接触。 隔离沟槽328形成在第三电介质层中并且与隔离通孔326接触。隔离通孔326可减少在从第一沟槽316行进到第二沟槽318的电子的操作/传导过程中的空隙形成和/或空隙迁移 金属线304。

公开(公告)号：US07566652B2

公开(公告)日：2009-07-28

申请号：US11491846

申请日：2006-07-24

申请人： Ki-Don Lee ,  Young-Joon Park ,  Ennis Takashi Ogawa

发明人： Ki-Don Lee ,  Young-Joon Park ,  Ennis Takashi Ogawa

IPC分类号： H01L21/20

CPC分类号： H01L23/522 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device 300 includes a metal line 304 formed in a first dielectric layer 302. A capping layer 306 is formed the metal line 304. A second dielectric layer 308 is formed over the first dielectric layer 302 and the metal line 304. A first via 310 is formed in the second dielectric layer 308 and in contact with the metal line 304. A second via 312 is formed in the second dielectric layer 308 and in contact with the metal line 304, and is positioned a distance away from the first via 310. An electrically isolated via 326 is formed in the second dielectric layer 308 and in contact with the metal line 304 and in between the first via 310 and the second via 312. A third dielectric layer 314 is formed over the second dielectric layer 308. First and second trenches 316, 318 are formed in the third dielectric layer 314 and in contact with the first via 310 and the second via 312, respectively. An isolated trench 328 is formed in the third dielectric layer and in contact with the isolated via 326. The isolated via 326 mitigates void formation and/or void migration during operation/conduction with electrons traveling from the first trench 316 to the second trench 318 via the metal line 304.

摘要翻译： 半导体器件300包括形成在第一电介质层302中的金属线304.覆盖层306形成为金属线304.第二电介质层308形成在第一电介质层302和金属线304上。第一通孔 310形成在第二电介质层308中并与金属线304接触。第二通孔312形成在第二电介质层308中并与金属线304接触，并且与第一通孔310相距一定距离 电绝缘通孔326形成在第二电介质层308中并与金属线304接触并且在第一通孔310和第二通孔312之间。第三电介质层314形成在第二介电层308上。首先 并且第二沟槽316,318分别形成在第三电介质层314中并与第一通孔310和第二通孔312接触。 隔离沟槽328形成在第三电介质层中并且与隔离通孔326接触。隔离通孔326可减少在从第一沟槽316行进到第二沟槽318的电子的操作/传导过程中的空隙形成和/或空隙迁移 金属线304。