公开(公告)号：US20060140010A1

公开(公告)日：2006-06-29

申请号：US11144174

申请日：2005-06-02

申请人： Lorenzo Bedarida ,  Fabio Caser ,  Simone Bartoli ,  Giorgio Oddone

发明人： Lorenzo Bedarida ,  Fabio Caser ,  Simone Bartoli ,  Giorgio Oddone

IPC分类号： G11C16/04

CPC分类号： G11C16/3454

摘要： A system and method for reducing soft-writing in a multilevel flash memory during read or verify includes a memory cell. A first and second reference cells are coupled to the memory cell and are configured to receive a first and a second voltage. A current comparison circuit is coupled to the first and second reference cells and to the memory cell and is configured to compare current flow through the memory cell with current flow through the first and second reference cells, and to determine whether the memory cell holds a first range of values while the first reference cell receives the first voltage, and if the memory cell does not hold the first range of values, to determine whether the memory cell holds a second range of values while the second reference cell receives the second voltage, thereby reducing soft-writing during the read operation.