公开(公告)号：US5464159A

公开(公告)日：1995-11-07

申请号：US56180

申请日：1993-05-03

申请人： Andreas Wolf ,  Franz Koeppl

发明人： Andreas Wolf ,  Franz Koeppl

IPC分类号： H01L21/301 ,  B02C19/18 ,  B22F9/04 ,  B28D5/00 ,  C01B33/02 ,  C30B15/00

CPC分类号： C30B15/00 ,  B02C19/18 ,  B22F9/04 ,  B28D5/0005 ,  C01B33/02 ,  B02C2019/183

摘要： Bodies of hyperpure semiconductor material can be reduced in size without ntamination by being subjected to shock waves. The method is preferably carried out at room temperature, so that diffusion into the interior of the semiconductor, which is induced and/or accelerated by high temperatures, is largely avoided for superficially adsorbed foreign particles. The shock waves are generated in a focal point of a semiellipsoidal reflector by electrical discharge between two electrodes.

摘要翻译： 超薄半导体材料的体可以通过受到冲击波的影响而减小尺寸而不会受到污染。 该方法优选在室温下进行，从而大大避免了表面吸附的外来颗粒对扩散进入半导体内部的高温诱发和/或加速。 通过两个电极之间的放电在半透明反射体的焦点处产生冲击波。