公开(公告)号：US20110318576A1

公开(公告)日：2011-12-29

申请号：US13254705

申请日：2010-03-05

Applicant: Denis Busardo ,  Frederic Guernalec

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: C23C14/20 ,  B32B27/06

CPC classification number: C08J7/123 ,  B05D1/60 ,  B05D3/14 ,  B05D5/08 ,  B05D7/04 ,  C08J2321/00 ,  C23C14/48 ,  Y10T428/265

Abstract: The invention relates to a method for treating at least one surface of a solid elastomer part using helium ions. According to the invention, multi-energy ions He+ and He2+ are implanted simultaneously, and the ratio RHe, where RHe=HeVHe2+ with He+ et He2+ expressed in atomic percentage, is less than or equal to 100, for example less than 20, resulting in very significant reductions in the frictional properties of parts treated in this way. The He+ and He2+ ions are supplied, for example, by an ECR source.

Abstract translation: 本发明涉及使用氦离子处理固体弹性体部件的至少一个表面的方法。 根据本发明，同时注入多能离子He +和He2 +，其中RHe = HeVHe2 +与He + et He2 +以原子百分比表示的比率RHe小于或等于100，例如小于20，导致 以这种方式处理的部件的摩擦性能非常显着的降低。 He +和He2 +离子例如由ECR源提供。

公开(公告)号：US20090212238A1

公开(公告)日：2009-08-27

申请号：US10587465

申请日：2005-02-02

Applicant: Frederic Guernalec ,  Denis Busardo

Inventor： Frederic Guernalec ,  Denis Busardo

IPC: A61N5/00

CPC classification number: C23C14/48

Abstract: The invention relates to a device for implanting ions in an aluminium alloy part (5), said device comprising an ion source (6) supplying ions accelerated by an extraction voltage, and first means for regulating (7-11) an initial beam (f1′) of ions emitted by said source (6) to form an implantation beam (f1). The source (6) is an electronic cyclotronic resonance source generating the initial beam (f1′) of multi-energy ions that are implanted in the part (5) at a temperature below 120° C. The implantation of said multi-energy ions of the implantation beam (f1) regulated by the regulating means (7-11) is simultaneously carried out at a depth controlled by the extraction voltage of the source.

Abstract translation: 本发明涉及一种用于在铝合金部件（5）中注入离子的装置，所述装置包括提供由提取电压加速的离子的离子源（6）和用于调节（7-11）初始束（f1 '）由所述源（6）发射的离子以形成注入束（f1）。 源（6）是电子回旋共振源，其在低于120℃的温度下产生注入到部分（5）中的多能离子的初始束（f1'）。所述多能离子的注入 由调节装置（7-11）调节的注入束（f1）在由源的提取电压控制的深度的同时进行。