公开(公告)号：US20120276749A1

公开(公告)日：2012-11-01

申请号：US13518660

申请日：2010-12-23

申请人： Dirk Habermann ,  Martin Schoch ,  Maher Izaaryene ,  Friedhelm Stein

发明人： Dirk Habermann ,  Martin Schoch ,  Maher Izaaryene ,  Friedhelm Stein

IPC分类号： H01L21/306 ,  B05B1/14

CPC分类号： H01L21/6708

摘要： In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate.

摘要翻译： 在沿着水平传送路径平坦地输送的单晶硅晶片的处理方法中，通过喷嘴等从上方施加用于纹理化表面的蚀刻液。 蚀刻溶液从上述几次连续地施加到硅衬底的上侧，保留在那里并与硅衬底反应。