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公开(公告)号:US5412854A
公开(公告)日:1995-05-09
申请号:US77865
申请日:1993-06-18
摘要: A high frequency focused transducer may be formed by fabricating a piezoelectric or ferroelectric wafer of a thickness less than about 100 microns and bonding a malleable sheet to the wafer with a thin layer of adhesive. Thereafter, the composite may be pressed into a spherical mold to form a curved transducer without fracturing the wafer. In another embodiment, a conductive adhesive layer may be applied to the wafer to a thickness sufficient to hold the wafer in a curved state, when set. After the adhesive is set, the composite may be pressed into the mold while the adhesive is held at an elevated temperature whereat it is elastic. Thereafter the composite is cooled so that the adhesive layer is stabilized and the curved transducer is removed from the well.
摘要翻译: 可以通过制造厚度小于约100微米的压电或铁电晶片来形成高频聚焦传感器,并用薄层粘合剂将可延展的片材粘合到晶片上。 此后,可以将复合材料压入球形模具中以形成弯曲的换能器而不破裂晶片。 在另一个实施例中,当设置时,导电粘合剂层可以施加到晶片上以足以将晶片保持在弯曲状态的厚度。 粘合剂固化后,可将复合材料压入模具中,同时将粘合剂保持在高弹性的高温下。 此后,将复合材料冷却,使粘合剂层稳定,并将弯曲的换能器从井中取出。