公开(公告)号：US4128844A

公开(公告)日：1978-12-05

申请号：US836856

申请日：1977-09-26

申请人： Arno Illenberger ,  Gert Ruprecht ,  Klaus Berger

发明人： Arno Illenberger ,  Gert Ruprecht ,  Klaus Berger

IPC分类号： H01J29/45 ,  H01L27/14

CPC分类号： H01J29/451

摘要： Proceeding in order from the light-side to the beam-side of the target structure, the structure includes a transparent glass plate, a transparent signal electrode, a photoconductive layer of n-type CdSe, and a layer of n-type ZnSe. The interface between the two n-type layers is possessed of a multitude of interface states capable of capturing holes optically liberated in the photoconductor and electrons injected by the scanning beam. Beam-injected electrons cannot pass directly across the interface, and therefore dark current is reduced in a manner as effective as with p-n junction target structures. Each optically generated hole trapped at the interface lowers the potential barrier for beam-injected trapped electrons by an amount such as to cause more than one such electron to enter the conduction band of the CdSe layer, resulting in greater-than-unity amplification. Amplification by factors in excess of 100 can be achieved.

摘要翻译： 从目标结构的光侧到光束侧依次进行，结构包括透明玻璃板，透明信号电极，n型CdSe的光电导层和n型ZnSe层。 两个n型层之间的界面具有能够捕获在光电导体中光学释放的空穴和由扫描光束注入的电子的多个界面状态。 光束注入的电子不能直接通过界面，因此暗电流以与p-n结靶结构一样有效的方式被减少。 捕获在界面处的每个光学生成的空穴将束注入的俘获电子的势垒降低一定量，使得多于一个这样的电子进入CdSe层的导带，导致大于一致的放大。 可以实现超过100的因子的扩增。