公开(公告)号：US6072201A

公开(公告)日：2000-06-06

申请号：US227322

申请日：1999-01-06

申请人： Yeau-Kuen Fang ,  Kuen-Hsien Lee ,  Gun-Yuan Lee

发明人： Yeau-Kuen Fang ,  Kuen-Hsien Lee ,  Gun-Yuan Lee

IPC分类号： H01L31/107 ,  H01L29/165 ,  H01L31/0312

CPC分类号： H01L31/1075

摘要： An amorphous silicon based hole-injection type "Separate Absorption and Multiplication Avalanche Photodiode" ("SAMAPD") has been invented. The device was made by separating an absorption layer and an avalanche layer from a conventional APD (Avalanche Photodiode). This will make a majority of an voltage bias to go across on the avalanche layer (i.e., a high energy bandgap material) and to enlarge an avalanche multiplication effect (i.e., increasing optical gains). In addition, the voltage bias goes across on the absorption layer will be sufficiently small to reduce a dark current. Using an i-a-Si:H material as the avalanche layer material and an i-a-Si.sub.1-x :Ge.sub.x :H material as the absorption layer material, the hole-injection type SAMPAD yields a very high gain, i.e., 686, at a reverse bias of 16V under an incident light power of P.sub.in =1 .mu.w. The product of this invention is very suitable for use in a long distance optical communication.

摘要翻译： 已经发明了非晶硅基空穴注入型“分离吸收和乘法雪崩光电二极管”（“SAMAPD”）。 该装置通过从常规APD（雪崩光电二极管）分离吸收层和雪崩层而制成。 这将使大部分电压偏置在雪崩层（即，高能带隙材料）上穿过，并且增大雪崩倍增效应（即，增加光学增益）。 此外，在吸收层上穿过的电压偏压将足够小以减少暗电流。 使用ia-Si：H材料作为雪崩层材料和ia-Si1-x：Gex：H材料作为吸收层材料，空穴注入型SAMPAD产生非常高的增益，即686，在反向 Pin = 1μW的入射光功率为16V。 本发明的产品非常适用于长距离光通信。