公开(公告)号：US20130039012A1

公开(公告)日：2013-02-14

申请号：US13568560

申请日：2012-08-07

申请人： CHUAN-FENG SHIH ,  JON-LIAN KWO ,  SHENG-WEN FU ,  HSUAN-TA WU

发明人： CHUAN-FENG SHIH ,  JON-LIAN KWO ,  SHENG-WEN FU ,  HSUAN-TA WU

IPC分类号： H05K7/20

CPC分类号： H01L23/427 ,  H01L23/473 ,  H01L2224/48091 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to a heat dissipation device, including at least one semiconductor device, at least one first substrate and a cooling substance. The first substrate has a first surface, a second surface and at least one hole, wherein the semiconductor device is located on the first surface of the first substrate, and the hole is opened at the second surface of the first substrate and corresponds to the semiconductor device. The cooling substance is used for flowing in the hole and taking away heat from the semiconductor device, wherein the cooling substance is in contact with the first substrate. Thereby, the temperature of the semiconductor device can be reduced efficiently.

摘要翻译： 本发明涉及一种散热装置，其包括至少一个半导体装置，至少一个第一基板和冷却物质。 第一衬底具有第一表面，第二表面和至少一个孔，其中半导体器件位于第一衬底的第一表面上，并且孔在第一衬底的第二表面处开口，并且对应于半导体 设备。 冷却物质用于在孔中流动并从半导体器件中吸收热量，其中冷却物质与第一基底接触。 由此，可以有效地降低半导体器件的温度。